Pressure dependence of Ag photodoping in amorphous As-S films


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5792

Title:	Pressure dependence of Ag photodoping in amorphous As-S films
Authors:	Tanaka, Keiji¹ Browse this author →KAKEN DB
Authors(alt):	田中, 啓司¹
Issue Date:	Feb-1990
Publisher:	American Physical Society
Journal Title:	PHYSICAL REVIEW LETTERS
Volume:	65
Issue:	7
Start Page:	871
End Page:	874
Publisher DOI:	10.1103/PhysRevLett.65.871
Abstract:	The photodoping process in Ag/As25S75 layers subjected to hydrostatic compression up to 100 kbar has been studied. With an increase in pressure, the response becomes faster and then quenched above a threshold pressure, which is 70–80 kbar when light is incident upon the Ag surface. The characteristic suggests that migration of Ag ions between As-S molecular clulsters and/or accumulation of electronic carriers in the Ag-doped region is responsible for the photodoping.
Rights:	Copyright © 1990 American Physical Society
Relation:	http://www.aps.org/
Type:	article
URI:	http://hdl.handle.net/2115/5792
Appears in Collections:	工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 田中啓司

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