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Pressure dependence of structural and electronic properties of polysilane alloys

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Title: Pressure dependence of structural and electronic properties of polysilane alloys
Authors: Tanaka, Keiji1 Browse this author →KAKEN DB
Nitta, Shoji Browse this author
Authors(alt): 田中, 啓司1
Issue Date: Feb-1989
Publisher: American Physical Society
Journal Title: PHYSICAL REVIEW B
Volume: 39
Issue: 5
Start Page: 3258
End Page: 3264
Publisher DOI: 10.1103/PhysRevB.39.3258
Abstract: Pressure effects on structure and physical properties in quasi-one-dimensional a-Si:H films consisting of polysilane molecules and a-Si clusters have been investigated up to 100 kbar. X-ray diffraction patterns for the film at 1 atm show a prominent first sharp diffraction peak, which shifts to higher angles with decreasing intensity upon pressurizing. The macroscopic volume is compressed dramatically below 50 kbar. At higher pressures, the structural changes become less salient, and by contrast, the band-gap energy decreases remarkably with a pressure coefficient of -8 meV/kbar. These pressure-induced changes are discussed in comparison with characteristics in three-dimensional a-Si films and in chalcogenide glasses. Essential roles of low-dimensional structures and σ-electron states in polysilane molecules are suggested.
Rights: Copyright © 1989 American Physical Society
Relation: http://www.aps.org
Type: article
URI: http://hdl.handle.net/2115/5793
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 田中 啓司

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