Ultrafast carrier diffusion in gallium arsenide probed with picosecond acoustic pulses


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5797

Title:	Ultrafast carrier diffusion in gallium arsenide probed with picosecond acoustic pulses
Authors:	Wright, O. B.¹ Browse this author →KAKEN DB
	Perrin, B. Browse this author
	Matsuda, O. Browse this author →KAKEN DB
	Gusev, V. E. Browse this author
Authors(alt):	ライト, オリバーバーナード¹
Issue Date:	2001
Publisher:	American Physical Society
Journal Title:	PHYSICAL REVIEW B
Volume:	64
Start Page:	081202(R)
Publisher DOI:	10.1103/PhysRevB.64.081202
Abstract:	We describe an experimental investigation of the generation and detection of picosecond acoustic-phonon pulses in a thin slab of GaAs using ultrashort optical pulses. Comparison of the optical phase variation with a simple theory for ambipolar diffusion indicates that carrier diffusion has a significant effect on the shape of the phonon pulses generated. The phonon pulse duration is measured to be ;25 ps, four times longer than that expected from optical-absorption considerations alone, indicating that hot carriers penetrate more than 100 nm into the sample during the phonon pulse generation process.
Rights:	Copyright © 2001 American Physical Society
Relation:	http://www.aps.org/
Type:	article
URI:	http://hdl.handle.net/2115/5797
Appears in Collections:	工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: WRIGHT O. B.

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