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Ultrafast carrier diffusion in gallium arsenide probed with picosecond acoustic pulses

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Title: Ultrafast carrier diffusion in gallium arsenide probed with picosecond acoustic pulses
Authors: Wright, O. B.1 Browse this author →KAKEN DB
Perrin, B. Browse this author
Matsuda, O. Browse this author →KAKEN DB
Gusev, V. E. Browse this author
Authors(alt): ライト, オリバー バーナード1
Issue Date: 2001
Publisher: American Physical Society
Volume: 64
Start Page: 081202(R)
Publisher DOI: 10.1103/PhysRevB.64.081202
Abstract: We describe an experimental investigation of the generation and detection of picosecond acoustic-phonon pulses in a thin slab of GaAs using ultrashort optical pulses. Comparison of the optical phase variation with a simple theory for ambipolar diffusion indicates that carrier diffusion has a significant effect on the shape of the phonon pulses generated. The phonon pulse duration is measured to be ;25 ps, four times longer than that expected from optical-absorption considerations alone, indicating that hot carriers penetrate more than 100 nm into the sample during the phonon pulse generation process.
Rights: Copyright © 2001 American Physical Society
Type: article
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: WRIGHT O. B.

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