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Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode

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Title: Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
Authors: Shiramine, Ken-ichi1 Browse this author →KAKEN DB
Muto, Shunichi Browse this author →KAKEN DB
Shibayama, Tamaki Browse this author
Takahashi, Heishichiro Browse this author
Kozaki, Tamotsu Browse this author →KAKEN DB
Sato, Seichi Browse this author
Nakata, Yoshiaki Browse this author
Yokoyama, Naoki Browse this author
Authors(alt): 白峰, 賢一1
Issue Date: Sep-2003
Publisher: American Vacuum Society
Journal Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume: 21
Issue: 5
Start Page: 2054
End Page: 2059
Publisher DOI: 10.1116/1.1605429
Abstract: Closely stacked multilayer structures of InAs islands with intermediate-layer thicknesses d of 3, 6, 10, and 20 nm were grown by the Stranski-Krastanow mode of molecular beam epitaxy and were observed using transmission electron microscopy (TEM) and atomic force microscopy (AFM). The multilayers consisted of five InAs layers each of a thickness of 1.8 monolayers and four GaAs layers each of a thickness d. Columns of coherent islands were observed by cross-sectional TEM. Changes in the size and density of the islands with d, determined by AFM, could be explained in terms of (i) change in the vertical pairing probability of islands, (ii) detachment of In from the top of the island, and (iii) surface segregation of In. The observed AFM images of the islands were elliptical. Their major axis was in the [110] direction, and the length of the minor axis was 80% of that of the major axis.
Type: article
URI: http://hdl.handle.net/2115/5856
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 白峰 賢一

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