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Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode
| Title: | Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode |
| Authors: | Shiramine, Ken-ichi1 Browse this author →KAKEN DB | | Itoh, Tomohiko Browse this author | | Muto, Shunichi Browse this author →KAKEN DB |
| Authors(alt): | 白峰, 賢一1 |
| Issue Date: | Mar-2004 |
| Publisher: | American Vacuum Society |
| Journal Title: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| Volume: | 22 |
| Issue: | 2 |
| Start Page: | 642 |
| End Page: | 646 |
| Publisher DOI: | 10.1116/1.1651113 |
| Abstract: | The number of In atoms in a critical cluster, i*, in Stranski-Krastanow (S-K) mode of InAs islands was determined to be 1-10. The i* was determined using an activation energy EA of 2.0 eV determined from an Arrhenius plot of the saturated density of InAs islands formed on a GaAs (001) surface by S-K mode of molecular beam epitaxy [K. Shiramine et al., J. Cryst. Growth 242, 332 (2002)], and an activation energy of 1.6 eV for migration (surface diffusion) of In adatoms, inferred from other references. The common value ~2.0 eV of EA in S-K mode was ascribed to the small i*. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5857 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 白峰 賢一
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