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Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode

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Title: Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode
Authors: Shiramine, Ken-ichi1 Browse this author →KAKEN DB
Itoh, Tomohiko Browse this author
Muto, Shunichi Browse this author →KAKEN DB
Authors(alt): 白峰, 賢一1
Issue Date: Mar-2004
Publisher: American Vacuum Society
Journal Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume: 22
Issue: 2
Start Page: 642
End Page: 646
Publisher DOI: 10.1116/1.1651113
Abstract: The number of In atoms in a critical cluster, i*, in Stranski-Krastanow (S-K) mode of InAs islands was determined to be 1-10. The i* was determined using an activation energy EA of 2.0 eV determined from an Arrhenius plot of the saturated density of InAs islands formed on a GaAs (001) surface by S-K mode of molecular beam epitaxy [K. Shiramine et al., J. Cryst. Growth 242, 332 (2002)], and an activation energy of 1.6 eV for migration (surface diffusion) of In adatoms, inferred from other references. The common value ~2.0 eV of EA in S-K mode was ascribed to the small i*.
Type: article
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 白峰 賢一

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