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Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory
| Title: | Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory |
| Authors: | Fujisawa, Takeshi Browse this author | | Saitoh, Kunimasa Browse this author →KAKEN DB |
| Keywords: | Mid-infrared photonics | | Si photonics | | GeSn quantum wells | | many-body theory |
| Issue Date: | May-2015 |
| Publisher: | IEEE |
| Journal Title: | IEEE journal of quantum electronics |
| Volume: | 51 |
| Issue: | 5 |
| Start Page: | 1 |
| End Page: | 8 |
| Publisher DOI: | 10.1109/JQE.2015.2410283 |
| Abstract: | Material gain of GeSn/SiGeSn quantum wells, which can be grown on Si substrate using a buffer layer, is analyzed based on microscopic many-body theory (MBT) for mid-infrared light sources based on Si photonics. MBT can consider a gain spectrum broadening associated with scattering phenomena, such as Coulomb scattering, based on quantum field theory, and does not need any artificial fitting parameters, such as a relaxation time, used in conventional analysis. Not only Gamma-but also carrier distributions in L-points are considered for the gain analysis. Using MBT, the quantum well structures maximizing the material gain and the differential gain at the threshold are investigated in terms of the well thickness, the strain, and the energy difference of quantum states between Gamma- and L-points. |
| Rights: | © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/58902 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 藤澤 剛
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