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Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(100)

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Title: Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(100)
Authors: Lebedev, Mikhail V. Browse this author
Ikeda, Katsuyoshi Browse this author
Noguchi, Hidenori Browse this author
Abe, Yusuke Browse this author
Uosaki, Kohei Browse this author →KAKEN DB
Keywords: GaAs
Sulfur passivation
Surface recombination
Semiconductor/solution interface
Ammonium sulfide
Solvent effect
Issue Date: 15-Feb-2013
Publisher: Elsevier
Journal Title: Applied Surface Science
Volume: 267
Start Page: 185
End Page: 188
Publisher DOI: 10.1016/j.apsusc.2012.09.076
Abstract: The ultrafast carrier dynamics of GaAs(1 0 0) surfaces passivated with different sulfide solutions is studied by time-resolved measurements of infrared absorption using the femtosecond visible-pump infrared-probe technique. After passivation of n-GaAs(1 0 0) surface with the solution of ammonium sulfide in 2-propanol the three-fold decrease of the surface recombination velocity is observed. The treatment of the n-GaAs(1 0 0) surface with the aqueous sulfide solution has a smaller impact on the surface recombination velocity. The different effect of aqueous and alcoholic sulfide solutions on the efficiency of surface passivation is caused by the different mechanisms of charge transfer at the semiconductor/solution interfaces.
Rights: © 2013, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
http://creativecommons.org/licenses/by-nc-nd/4.0/
Type: article (author version)
URI: http://hdl.handle.net/2115/59734
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

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