HUSCAP logo Hokkaido Univ. logo
Hokkaido University | Library | HUSCAP
Advanced Search
Home
About HUSCAP
オープンアクセス方針
 
Browse by Author
 
Browse
Communities
& Collections
 
Scholarly Journals
Theses
Doctoral Dissertations
Listed by Graduate Schools
Conference Procs.
Events
 
HUSCAP Senior
(in Japanese)
 
Societies
 
Top 50 Papers
(last 1 month)
Downloads (country)
 
For university staff
(in Japanese)
How to post
your papers
to HUSCAP
(in Japanese)
 
Open Archives Compliant
 
You can search
our collection
also at:
Google
Google Scholar
CiNii
IRDB
OAIster
NDLTD
 

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Science / Faculty of Science >
Peer-reviewed Journal Articles, etc >

Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(100)

This item is licensed under: Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International

Files in This Item:
ASS_267_p185-.pdf249.01 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/59734

Title: Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(100)
Authors: Lebedev, Mikhail V. Browse this author
Ikeda, Katsuyoshi Browse this author
Noguchi, Hidenori Browse this author
Abe, Yusuke Browse this author
Uosaki, Kohei Browse this author →KAKEN DB
Keywords: GaAs
Sulfur passivation
Surface recombination
Semiconductor/solution interface
Ammonium sulfide
Solvent effect
Issue Date: 15-Feb-2013
Publisher: Elsevier
Journal Title: Applied Surface Science
Volume: 267
Start Page: 185
End Page: 188
Publisher DOI: 10.1016/j.apsusc.2012.09.076
Abstract: The ultrafast carrier dynamics of GaAs(1 0 0) surfaces passivated with different sulfide solutions is studied by time-resolved measurements of infrared absorption using the femtosecond visible-pump infrared-probe technique. After passivation of n-GaAs(1 0 0) surface with the solution of ammonium sulfide in 2-propanol the three-fold decrease of the surface recombination velocity is observed. The treatment of the n-GaAs(1 0 0) surface with the aqueous sulfide solution has a smaller impact on the surface recombination velocity. The different effect of aqueous and alcoholic sulfide solutions on the efficiency of surface passivation is caused by the different mechanisms of charge transfer at the semiconductor/solution interfaces.
Rights: © 2013, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
http://creativecommons.org/licenses/by-nc-nd/4.0/
Type: article (author version)
URI: http://hdl.handle.net/2115/59734
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 
 - Hokkaido University