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Spin Blocker Using the Interband Rashba Effect in Symmetric Double Quantum Wells

PhysRevApplied.4.034010.pdf801.07 kBPDF見る/開く

タイトル: Spin Blocker Using the Interband Rashba Effect in Symmetric Double Quantum Wells
著者: Souma, S. 著作を一覧する
Sawada, A. 著作を一覧する
Chen, H. 著作を一覧する
Sekine, Y. 著作を一覧する
Eto, M. 著作を一覧する
Koga, T. 著作を一覧する
発行日: 2015年 9月29日
出版者: American Physical Society
誌名: Physical review applied
巻: 4
号: 3
開始ページ: 34010
出版社 DOI: 10.1103/PhysRevApplied.4.034010
抄録: We propose a lateral spin-blockade device that uses the interband Rashba effect in a symmetric double quantum well (QW), where the Rashba effect in the conventional sense vanishes because of its inversion symmetry. The interband Rashba effect manifests itself in the off-diagonal term (represented by the parameter eta) in the QW space using the bonding and antibonding basis [Esmerindo Bernardes, John Schliemann, Minchul Lee, J. Carlos Egues, and Daniel Loss, Phys. Rev. Lett. 99, 076603 (2007)]. In such a system, spin selection is possible by tuning the device length, gate electric field and in-plane magnetic field. We particularly show illustrative mechanisms using a one-dimensional model with k = (k(F), 0), where the selected spin can be blocked completely in the presence of the in-plane magnetic field. While the inclusion of the finite k(y) and/or the gate electric field deteriorates the spin polarization P, finite values remain for P (P>11%). Our proposal can also be regarded as an effective way of enhancing a variation of the Rashba-Edelstein effect, the generation of bulk spin polarization by electric current, based on semiconductor band engineering technology.
Rights: ©2015 American Physical Society
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 古賀 貴亮


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