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Spin relaxation in a quantum well by phonon scatterings
| Title: | Spin relaxation in a quantum well by phonon scatterings |
| Authors: | Akera, Hiroshi Browse this author →KAKEN DB | | Suzuura, Hidekatsu Browse this author →KAKEN DB | | Egami, Yoshiyuki Browse this author |
| Issue Date: | 15-Nov-2015 |
| Publisher: | American Physical Society (APS) |
| Journal Title: | Physical review B |
| Volume: | 92 |
| Issue: | 20 |
| Start Page: | 205311 |
| Publisher DOI: | 10.1103/PhysRevB.92.205311 |
| Abstract: | The spin relaxation due to the spin-orbit interaction (SOI) is studied theoretically in a quantum well with electrons occupying only the ground subband. First, it is shown that the coefficient of the Rashba SOI is proportional to b(off) - 1, in which the parameter boff, determined by the band offsets and the band gaps, passes through unity, for example, by changing x in Ga0.47In0.53As(well)/AlxGa1-xAsySb1-y (barrier). Second, it is derived that the transition matrix element of each spin-flip phonon scattering has the same proportionality factor b(off) - 1, in addition to the impurity scattering previously studied by the same authors [Phys. Rev. B 89, 075314 (2014)]. These findings suggest the possibility of strongly suppressing the spin-relaxation rate by choosing appropriate materials. |
| Rights: | ©2015 American Physical Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/60513 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 明楽 浩史
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