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Observation of Water-Droplet Impacts with Velocities of O(10 m/s) and Subsequent Flow Field

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/60688

Title: Observation of Water-Droplet Impacts with Velocities of O(10 m/s) and Subsequent Flow Field
Authors: Tatekura, Y. Browse this author
Fujikawa, T. Browse this author
Jinbo, Y. Browse this author
Sanada, T. Browse this author
Kobayashi, K. Browse this author
Watanabe, M. Browse this author
Issue Date: 11-Aug-2015
Publisher: The Electrochemical Society (ECS)
Journal Title: Ecs journal of solid state science and technology
Volume: 4
Issue: 9
Start Page: N117
End Page: N123
Publisher DOI: 10.1149/2.0111509jss
Abstract: A two-fluid spray cleaning technique has been gaining popularity as a cleaning process in the semiconductor industry. The most essential physical process in this technique is the impact of droplets with a velocity of O(10 m/s) on a solid surface. This study aims to experimentally and numerically investigate water-droplet impacts with velocities of up to 50 m/s and their subsequent flow fields, especially the gas flow field in the strictly limited area in the vicinity of the contact line. First, we experimentally evaluated the velocity of the splash and numerically calculated the gas velocities. Comparison of these velocities supported our assumption that the maximum gas velocity may be on approximately the same order as the velocity of the splash. Therefore, we concluded that the gas velocity field of the order of 500 m/s indeed develops at the impact of droplet with a velocity of the order of 50 m/s. Moreover, we determined that the gas pressure was of the order of 1.0 MPa by numerical analysis. Such a high pressure leads to shock wave propagation, which can contribute to the cleaning process in semiconductor production.
Rights: © The Electrochemical Society, Inc. 2015. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS journal of solid state science and technology.2015 volume 4, issue 9, N117-N123.
https://creativecommons.org/licenses/by-nc-nd/4.0/
Type: article
URI: http://hdl.handle.net/2115/60688
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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