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Composition and electronic properties of electrochemically deposited CdTe films
Title: | Composition and electronic properties of electrochemically deposited CdTe films |
Authors: | Takahashi, Makoto Browse this author | Uosaki, Kohei2 Browse this author →KAKEN DB | Kita, Hideaki Browse this author |
Authors(alt): | 魚崎, 浩平2 |
Issue Date: | 15-May-1984 |
Publisher: | American Institute of Physics |
Journal Title: | Journal of Applied Physics |
Volume: | 55 |
Issue: | 10 |
Start Page: | 3879 |
End Page: | 3881 |
Publisher DOI: | 10.1063/1.332904 |
Abstract: | The composition, type of semiconductivity, and resistivity of CdTe films deposited electrochemically from an aqueous solution of pH=1.4 containing 1 M CdSO4 and 1 mM TeO2 were investigated. X-ray diffraction peaks confirmed the formation of CdTe in the films deposited at potentials between –0.20 and –0.65 V (vs Ag/AgCl). The films deposited at potentials more positive than –0.35 V contained free Te in addition to CdTe. X-ray measurements showed that the more positive the deposition potential, the higher the concentration of free Te in the film. Auger electron spectroscopy measurements also confirmed that the Te/Cd ratio was higher in the films deposited at more positive potentials. The films deposited at potentials more positive than –0.35 V were p type and those deposited at more negative potentials were n type. The relation between the deposition potential and sheet resistance was ``volcano'' like and it seemed that the films deposited around –0.35 V where the semiconductivity of the films changed showed maximum resistivity. |
Rights: | Copyright © 1984 American Institute of Physics |
Relation: | http://www.aip.org/ |
Type: | article |
URI: | http://hdl.handle.net/2115/6126 |
Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 魚崎 浩平
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