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Composition and electronic properties of electrochemically deposited CdTe films

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Title: Composition and electronic properties of electrochemically deposited CdTe films
Authors: Takahashi, Makoto Browse this author
Uosaki, Kohei2 Browse this author →KAKEN DB
Kita, Hideaki Browse this author
Authors(alt): 魚崎, 浩平2
Issue Date: 15-May-1984
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 55
Issue: 10
Start Page: 3879
End Page: 3881
Publisher DOI: 10.1063/1.332904
Abstract: The composition, type of semiconductivity, and resistivity of CdTe films deposited electrochemically from an aqueous solution of pH=1.4 containing 1 M CdSO4 and 1 mM TeO2 were investigated. X-ray diffraction peaks confirmed the formation of CdTe in the films deposited at potentials between –0.20 and –0.65 V (vs Ag/AgCl). The films deposited at potentials more positive than –0.35 V contained free Te in addition to CdTe. X-ray measurements showed that the more positive the deposition potential, the higher the concentration of free Te in the film. Auger electron spectroscopy measurements also confirmed that the Te/Cd ratio was higher in the films deposited at more positive potentials. The films deposited at potentials more positive than –0.35 V were p type and those deposited at more negative potentials were n type. The relation between the deposition potential and sheet resistance was ``volcano'' like and it seemed that the films deposited around –0.35 V where the semiconductivity of the films changed showed maximum resistivity.
Rights: Copyright © 1984 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/6126
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

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