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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Science / Faculty of Science >
Peer-reviewed Journal Articles, etc >
Interfacial electron transfer as a significant step in photoelectrochemical reactions on some semiconductors
| Title: | Interfacial electron transfer as a significant step in photoelectrochemical reactions on some semiconductors |
| Authors: | Bockris, J. O'M. Browse this author | | Uosaki, K.2 Browse this author →KAKEN DB | | Kita, H. Browse this author |
| Authors(alt): | 魚崎, 浩平2 |
| Issue Date: | Feb-1981 |
| Publisher: | American Institute of Physics |
| Journal Title: | Journal of Applied Physics |
| Volume: | 52 |
| Issue: | 2 |
| Start Page: | 808 |
| End Page: | 810 |
| Publisher DOI: | 10.1063/1.328847 |
| Abstract: | Photoelectrochemical kinetics at the semiconductor-solution interface has been considered in all treatments in the literature, except one, to be rate controlled by processes inside the semiconductor. Evidence is presented which suggest that, at least for cathodic reactions on p-CdTe, the rate determining step is interfacial electron transfer, and a part of the total potential difference at the interface exists in the Helmholtz layer. Journal of Applied Physics is copyrighted by The American Institute of Physics. |
| Rights: | Copyright © 1981 American Institute of Physics |
| Relation: | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/6127 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 魚崎 浩平
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