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One electron-controlled multiple-valued dynamic random-access-memory

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Title: One electron-controlled multiple-valued dynamic random-access-memory
Authors: Kye, H. W. Browse this author
Song, B. N. Browse this author
Lee, S. E. Browse this author
Kim, J. S. Browse this author
Shin, S. J. Browse this author
Choi, J. B. Browse this author
Yu, Y. -S. Browse this author
Takahashi, Y. Browse this author →KAKEN DB
Keywords: Capacitors
Charged currents
Leakage currents
Issue Date: Feb-2016
Publisher: American Institute of Physics (AIP)
Journal Title: AIP Advances
Volume: 6
Issue: 2
Start Page: 025320-1
End Page: 025320-5
Publisher DOI: 10.1063/1.4942901
Abstract: We propose a new architecture for a dynamic random-access-memory (DRAM) capable of storing multiple values by using a single-electron transistor (SET). The gate of a SET is designed to be connected to a plurality of DRAM unit cells that are arrayed at intersections of word lines and bitlines. In this SET-DRAM hybrid scheme, the multiple switching characteristics of SET enables multiple value data stored in a DRAM unit cell, and this increases the storage functionality of the device. Moreover, since refreshing data requires only a small amount of SET driving current, this enables device operating with low standby power consumption. (C) 2016 Author(s).
Type: article
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 高橋 庸夫

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