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Raman Spectroscopy of Anodic Oxide Films on HgTe

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J.Electrochem.Soc.132,1864-1865(1985),Raman spectrosc. -- HgTe.pdf189.39 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/62182

Title: Raman Spectroscopy of Anodic Oxide Films on HgTe
Authors: Sakashita, Masao Browse this author
Ohtsuka, Toshiaki Browse this author →KAKEN DB
Sato, Norio Browse this author
Keywords: anodisation
mercury alloys
tellurium alloys
Raman spectroscopy
heating
passivation
Issue Date: Aug-1985
Publisher: The Electrochemical Society
Journal Title: J. Electrochemical Society
Volume: 132
Issue: 8
Start Page: 1864
End Page: 1865
Publisher DOI: 10.1149/1.2114232
Abstract: Laser Raman spectroscopic measurements of the anodic oxide film formed on HgTe in aqueous solutions reveal the characteristic Raman bands that appear at 422 and 684 cm-'. These bands, which are different from those of crystalline HgTeO3 and TeO2 powders, may be attributed to a complex oxide of HgTe205 or an amorphous oxide of TeO, that might be formed in anodic oxidation. The heating effect on the anodic oxide film due to a focused laser beam is also discussed.
Rights: © The Electrochemical Society, Inc. 1985. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 1985 volume 132, issue 8, 1864-1865 .
Type: article
URI: http://hdl.handle.net/2115/62182
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 大塚 俊明

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