Efficient gate control of spin-valve signals and Hanle signals in GaAs channel with p-i-n junction-type back-gate structure


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/64317

Title:	Efficient gate control of spin-valve signals and Hanle signals in GaAs channel with p-i-n junction-type back-gate structure
Authors:	Miyakawa, Takumi Browse this author
	Akiho, Takafumi Browse this author
	Ebina, Yuya Browse this author
	Yamamoto, Masafumi Browse this author →KAKEN DB
	Uemura, Tetsuya Browse this author →KAKEN DB
Issue Date:	25-Jan-2016
Publisher:	IOP Publishing
Journal Title:	Applied Physics Express (APEX)
Volume:	9
Issue:	2
Start Page:	023103
Publisher DOI:	10.7567/APEX.9.023103
Abstract:	Efficient gate control of spin-valve signals and Hanle signals was achieved in a GaAs channel with a p-i-n back-gate structure. Experiments showed that the amplitude of the spin-valve signal (Delta V-NL) under constant-injection-current conditions increased for a cross nonlocal geometry when the channel was depleted by the gate voltage (V-G). In contrast, the V-G dependence of Delta V-NL for a nonlocal geometry was complicated. The gate modulation efficiency of spin signals was approximately 50 times that with a graphene or Si channel.
Rights:	© 2016 The Japan Society of Applied Physics
Type:	article (author version)
URI:	http://hdl.handle.net/2115/64317
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 植村哲也

OAI-PMH ( junii2 , jpcoar_1.0 )

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