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Efficient gate control of spin-valve signals and Hanle signals in GaAs channel with p-i-n junction-type back-gate structure

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Title: Efficient gate control of spin-valve signals and Hanle signals in GaAs channel with p-i-n junction-type back-gate structure
Authors: Miyakawa, Takumi Browse this author
Akiho, Takafumi Browse this author
Ebina, Yuya Browse this author
Yamamoto, Masafumi Browse this author →KAKEN DB
Uemura, Tetsuya Browse this author →KAKEN DB
Issue Date: Feb-2016
Publisher: IOP Publishing
Journal Title: Applied Physics Express (APEX)
Volume: 9
Issue: 2
Publisher DOI: 10.7567/APEX.9.023103
Abstract: Efficient gate control of spin-valve signals and Hanle signals was achieved in a GaAs channel with a p-i-n back-gate structure. Experiments showed that the amplitude of the spin-valve signal (Delta V-NL) under constant-injection-current conditions increased for a cross nonlocal geometry when the channel was depleted by the gate voltage (V-G). In contrast, the V-G dependence of Delta V-NL for a nonlocal geometry was complicated. The gate modulation efficiency of spin signals was approximately 50 times that with a graphene or Si channel.
Rights: © 2016 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/64317
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 植村 哲也

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