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Switching of Cu/MoOx/TiN CBRAM occurred at MoOx/TiN interface
Title: | Switching of Cu/MoOx/TiN CBRAM occurred at MoOx/TiN interface |
Authors: | Arita, Masashi Browse this author →KAKEN DB | Ohno, Yuuki Browse this author | Takahashi, Yasuo Browse this author |
Keywords: | CBRAM | conductive filaments | copper | MoOx | ReRAM | transmission electron microscopy |
Issue Date: | Feb-2016 |
Publisher: | Wiley-Blackwell |
Journal Title: | Physica Status Solidi A applications and materials science |
Volume: | 213 |
Issue: | 2 |
Start Page: | 306 |
End Page: | 310 |
Publisher DOI: | 10.1002/pssa.201532414 |
Abstract: | For dynamical observation of CBRAM microstructure, in situ transmission electron microscopy (in situ TEM) was performed on Cu/MoOx/TiN during the resistive switching. It was confirmed that the local area near the MoOx/TiN interface contributes to resistive switching. The Cu deposit at the bottom of the MoOx layer swelled into the oxidized thin layer of the TiN bottom electrode, and a thin filament of 3-5nm diameter was formed in the Set process. The reversal change was seen in the Reset process. On increasing the switching power, a microstructural change in the MoOx layer was also seen, and the CBRAM film was finally destroyed. |
Rights: | This is the peer reviewed version of the following article: Physica Status Solidi (A) : applications and materials science, Volume 213, Issue 2, Pages 306–310, February 2016, which has been published in final form at http://doi.org/10.1002/pssa.201532414. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/64496 |
Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 有田 正志
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