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Switching of Cu/MoOx/TiN CBRAM occurred at MoOx/TiN interface

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タイトル: Switching of Cu/MoOx/TiN CBRAM occurred at MoOx/TiN interface
著者: Arita, Masashi 著作を一覧する
Ohno, Yuuki 著作を一覧する
Takahashi, Yasuo 著作を一覧する
キーワード: CBRAM
conductive filaments
copper
MoOx
ReRAM
transmission electron microscopy
発行日: 2016年 2月
出版者: Wiley-Blackwell
誌名: Physica Status Solidi A applications and materials science
巻: 213
号: 2
開始ページ: 306
終了ページ: 310
出版社 DOI: 10.1002/pssa.201532414
抄録: For dynamical observation of CBRAM microstructure, in situ transmission electron microscopy (in situ TEM) was performed on Cu/MoOx/TiN during the resistive switching. It was confirmed that the local area near the MoOx/TiN interface contributes to resistive switching. The Cu deposit at the bottom of the MoOx layer swelled into the oxidized thin layer of the TiN bottom electrode, and a thin filament of 3-5nm diameter was formed in the Set process. The reversal change was seen in the Reset process. On increasing the switching power, a microstructural change in the MoOx layer was also seen, and the CBRAM film was finally destroyed.
Rights: This is the peer reviewed version of the following article: Physica Status Solidi (A) : applications and materials science, Volume 213, Issue 2, Pages 306–310, February 2016, which has been published in final form at http://doi.org/10.1002/pssa.201532414. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
資料タイプ: article (author version)
URI: http://hdl.handle.net/2115/64496
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 有田 正志

 

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