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Switching of Cu/MoOx/TiN CBRAM occurred at MoOx/TiN interface

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Title: Switching of Cu/MoOx/TiN CBRAM occurred at MoOx/TiN interface
Authors: Arita, Masashi Browse this author →KAKEN DB
Ohno, Yuuki Browse this author
Takahashi, Yasuo Browse this author
Keywords: CBRAM
conductive filaments
copper
MoOx
ReRAM
transmission electron microscopy
Issue Date: Feb-2016
Publisher: Wiley-Blackwell
Journal Title: Physica Status Solidi A applications and materials science
Volume: 213
Issue: 2
Start Page: 306
End Page: 310
Publisher DOI: 10.1002/pssa.201532414
Abstract: For dynamical observation of CBRAM microstructure, in situ transmission electron microscopy (in situ TEM) was performed on Cu/MoOx/TiN during the resistive switching. It was confirmed that the local area near the MoOx/TiN interface contributes to resistive switching. The Cu deposit at the bottom of the MoOx layer swelled into the oxidized thin layer of the TiN bottom electrode, and a thin filament of 3-5nm diameter was formed in the Set process. The reversal change was seen in the Reset process. On increasing the switching power, a microstructural change in the MoOx layer was also seen, and the CBRAM film was finally destroyed.
Rights: This is the peer reviewed version of the following article: Physica Status Solidi (A) : applications and materials science, Volume 213, Issue 2, Pages 306–310, February 2016, which has been published in final form at http://doi.org/10.1002/pssa.201532414. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
Type: article (author version)
URI: http://hdl.handle.net/2115/64496
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 有田 正志

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