Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

Shimabayashi, Masaharu; Kurihara, Kazuaki; Horikawa, Yoshimine; Sasaki, Koichi

doi:10.7567/JJAP.55.036503


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Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/64517

Title:	Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas
Authors:	Shimabayashi, Masaharu Browse this author
	Kurihara, Kazuaki Browse this author
	Horikawa, Yoshimine Browse this author
	Sasaki, Koichi Browse this author →KAKEN DB
Issue Date:	Mar-2016
Publisher:	IOP Publishing
Journal Title:	Japanese Journal of Applied Physics (JJAP)
Volume:	55
Issue:	3
Start Page:	036503
Publisher DOI:	10.7567/JJAP.55.036503
Abstract:	We examined the atomic concentrations and the weight densities of SiC surfaces irradiated with remote nitrogen plasmas. The unique approach of this work is that we compared the SiC surface irradiated with atomic nitrogen with that irradiated with a mixture of atomic nitrogen and molecular nitrogen in the metastable A(3)Sigma(+)(u) state. As a result, it was found that molecular nitrogen in the A(3)Sigma(+)(u) state has a higher efficiency than atomic nitrogen in the nitriding of SiC surfaces. The weight density measurements have revealed the removal of Si and C from the SiC surface by the irradiation of remote nitrogen plasma. These results suggest that the formation of volatile molecules is less significant when the SiC surface is irradiated with molecular nitrogen in the metastable A(3)Sigma(+)(u) state.
Rights:	© 2016 The Japan Society of Applied Physics
Type:	article (author version)
URI:	http://hdl.handle.net/2115/64517
Appears in Collections:	工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 嶋林正晴

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