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Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

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タイトル: Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas
著者: Shimabayashi, Masaharu 著作を一覧する
Kurihara, Kazuaki 著作を一覧する
Horikawa, Yoshimine 著作を一覧する
Sasaki, Koichi 著作を一覧する
発行日: 2016年 3月
出版者: IOP Publishing
誌名: Japanese Journal of Applied Physics (JJAP)
巻: 55
号: 3
開始ページ: 036503
出版社 DOI: 10.7567/JJAP.55.036503
抄録: We examined the atomic concentrations and the weight densities of SiC surfaces irradiated with remote nitrogen plasmas. The unique approach of this work is that we compared the SiC surface irradiated with atomic nitrogen with that irradiated with a mixture of atomic nitrogen and molecular nitrogen in the metastable A(3)Sigma(+)(u) state. As a result, it was found that molecular nitrogen in the A(3)Sigma(+)(u) state has a higher efficiency than atomic nitrogen in the nitriding of SiC surfaces. The weight density measurements have revealed the removal of Si and C from the SiC surface by the irradiation of remote nitrogen plasma. These results suggest that the formation of volatile molecules is less significant when the SiC surface is irradiated with molecular nitrogen in the metastable A(3)Sigma(+)(u) state.
Rights: © 2016 The Japan Society of Applied Physics
資料タイプ: article (author version)
URI: http://hdl.handle.net/2115/64517
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 嶋林 正晴

 

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