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Gate-voltage-induced switching of the Rashba spin-orbit interaction in a composition-adjusted quantum well

PhysRevB.95.045301.pdf277.95 kBPDF見る/開く

タイトル: Gate-voltage-induced switching of the Rashba spin-orbit interaction in a composition-adjusted quantum well
著者: Akera, Hiroshi 著作を一覧する
Suzuura, Hidekatsu 著作を一覧する
Egami, Yoshiyuki 著作を一覧する
発行日: 2017年 1月 3日
出版者: American Physical Society (APS)
誌名: Physical Review B
巻: 95
号: 4
開始ページ: 045301
出版社 DOI: 10.1103/PhysRevB.95.045301
抄録: The coefficient alpha of the Rashba spin-orbit interaction is calculated in an asymmetric quantum well consisting of Ga0.47In0.53As (well), Al0.48In0.52As (left barrier), and AlxGa1-xAsySb1-y (right barrier) as a function of the external electric field perpendicular to the well E-z(ex) which is controlled by the gate voltage. This coefficient alpha, which depends on the band offset, can be tuned to be zero by adjusting the Al fraction x in the right barrier layer to the optimum value x(0) in the case where the wave function vanishes at the left heterointerface. Such a composition-adjusted asymmetric quantum well is proposed as a structure in which the magnitude of a can be switched by changing the polarity of E-z(ex). The calculation shows that, when vertical bar x - x(0)vertical bar < 0.01, the on/off vertical bar alpha vertical bar ratio > 40 for a large enough vertical bar E-z(ex)vertical bar (vertical bar E-z(ex)vertical bar > 10(7) V/m for a well width of 20 nm), which results in the on/off spin-relaxation-rate ratio exceeding 10(3) in the Dyakonov-Perel mechanism.
Rights: ©2017 American Physical Society
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 明楽 浩史


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