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Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures
Title: | Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures |
Authors: | Chen, S. L. Browse this author | Kiba, T. Browse this author | Yang, X. J. Browse this author | Takayama, J. Browse this author | Murayama, A. Browse this author →KAKEN DB |
Issue Date: | 22-Mar-2016 |
Publisher: | American Institute of Physics (AIP) |
Journal Title: | Journal of Applied Physics |
Volume: | 119 |
Issue: | 11 |
Start Page: | 115701-1 |
End Page: | 115701-5 |
Publisher DOI: | 10.1063/1.4944039 |
Abstract: | Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QD excited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5-180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interaction with random nuclear field. (C) 2016 AIP Publishing LLC. |
Rights: | The following article appeared in Journal of Applied Physics 119, 115701 (2016); doi: 10.1063/1.4944039 and may be found at http://doi.org/10.1063/1.4944039. |
Type: | article |
URI: | http://hdl.handle.net/2115/64773 |
Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 村山 明宏
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