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Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/64773

Title: Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures
Authors: Chen, S. L. Browse this author
Kiba, T. Browse this author
Yang, X. J. Browse this author
Takayama, J. Browse this author
Murayama, A. Browse this author →KAKEN DB
Issue Date: 22-Mar-2016
Publisher: American Institute of Physics (AIP)
Journal Title: Journal of Applied Physics
Volume: 119
Issue: 11
Start Page: 115701-1
End Page: 115701-5
Publisher DOI: 10.1063/1.4944039
Abstract: Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QD excited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5-180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interaction with random nuclear field. (C) 2016 AIP Publishing LLC.
Rights: The following article appeared in Journal of Applied Physics 119, 115701 (2016); doi: 10.1063/1.4944039 and may be found at http://doi.org/10.1063/1.4944039.
Type: article
URI: http://hdl.handle.net/2115/64773
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 村山 明宏

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