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Effect of SiC Addition on Oxidation Behavior of ZrB2 at 1273 K and 1473 K
| Title: | Effect of SiC Addition on Oxidation Behavior of ZrB2 at 1273 K and 1473 K |
| Authors: | Zhang, Lihua Browse this author | | Kurokawa, Kazuya Browse this author →KAKEN DB |
| Keywords: | Zirconium diboride | | Silicon carbide | | Oxidation | | High temperature |
| Issue Date: | Apr-2016 |
| Publisher: | Springer |
| Journal Title: | Oxidation of metals |
| Volume: | 85 |
| Issue: | 3-4 |
| Start Page: | 311 |
| End Page: | 320 |
| Publisher DOI: | 10.1007/s11085-015-9585-9 |
| Abstract: | The oxidation behavior of ZrB2-SiC composites with different contents of SiC addition was investigated at 1273 and 1473 K in air for 12 h in this study. The SiC addition contents ranged from 0 to 30 wt%. The results showed that when ZrB2-SiC composites were oxidized at 1273 K in air, a two-oxide layer-structure forms: a continuous glassy layer and a ZrO2 layer contained unoxidized SiC. When SiC content is 5 and 10 wt%, the glassy layer is mainly composed by B2O3. When SiC content is 20 and 30 wt%, a borosilicate glass could be formed on the top layer, which could improve the oxidation resistance of ZrB2. When ZrB2-SiC composites were oxidized at 1473 K in air, the oxide layer was composed of ZrO2 and SiO2 and unreacted SiC. Additionally, when SiC addition content was higher than 10 wt%, a continuous borosilicate glass layer could be formed on the top of the oxide layer at 1473 K. With the increase of SiC content in ZrB2, the oxide layer thickness decreased at both 1273 and 1473 K. |
| Rights: | The final publication is available at link.springer.com |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/64911 |
| Appears in Collections: | エネルギー・マテリアル融合領域研究センター (Center for Advanced Research of Energy and Material) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 張 麗華
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