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Power-dependent spin amplification in (In, Ga) As/GaAs quantum well via Pauli blocking by tunnel-coupled quantum dot ensembles

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Title: Power-dependent spin amplification in (In, Ga) As/GaAs quantum well via Pauli blocking by tunnel-coupled quantum dot ensembles
Authors: Chen, S. L. Browse this author
Kiba, T. Browse this author
Yang, X. J. Browse this author
Takayama, J. Browse this author
Murayama, A. Browse this author →KAKEN DB
Issue Date: 11-Apr-2016
Publisher: American Institute of Physics (AIP)
Journal Title: Applied physics letters
Volume: 108
Issue: 15
Start Page: 152103-1
End Page: 152103-4
Publisher DOI: 10.1063/1.4945740
Abstract: Power-dependent time-resolved optical spin orientation measurements were performed on In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dot (QD) tunnel-coupled structures with an 8-nm-thick GaAs barrier. A fast transient increase of electron spin polarization was observed at the QW ground state after circular-polarized pulse excitation. The temporal maximum of polarization increased with increasing pumping fluence owing to enhanced spin blocking in the QDs, yielding a highest amplification of 174% with respect to the initial spin polarization. Further elevation of the laser power gradually quenched the polarization dynamics, which was induced by saturated spin filling of both the QDs and the QW phase spaces.
Rights: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters 108, 152103 (2016) and may be found at http://dx.doi.org/10.1063/1.4945740.
Type: article
URI: http://hdl.handle.net/2115/65015
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 村山 明宏

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