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Formation of oxide films for high-capacitance aluminum electrolytic capacitor by liquid-phase deposition and anodizing
| Title: | Formation of oxide films for high-capacitance aluminum electrolytic capacitor by liquid-phase deposition and anodizing |
| Authors: | Sakairi, Masatoshi Browse this author →KAKEN DB | | Fujita, Ryota Browse this author | | Nagata, Shinji Browse this author |
| Keywords: | dielectric film | | liquid-phase deposition | | anodizing | | aluminum | | titanium oxide |
| Issue Date: | Aug-2016 |
| Publisher: | Wiley-Blackwell |
| Journal Title: | Surface and Interface Analysis |
| Volume: | 48 |
| Issue: | 8 |
| Start Page: | 899 |
| End Page: | 905 |
| Publisher DOI: | 10.1002/sia.5851 |
| Abstract: | Liquid phase deposition (LPD) treatment and anodizing were used to form oxide layer for a high-capacitance aluminum electrolytic capacitor. Formation of protective oxide layers and modification of LPD conditions make it possible to prolong the LPD duration and lead to the formation of TiO2 and NaF deposits on aluminum. A titanium oxide / aluminum oxide mixed layer was formed by a combination process of LPD treatment and anodizing. The capacitance of the formed layer was about 300% higher than that of an anodic oxide film formed on electropolished aluminum. The structures and compositions of the films that were formed were determined by transmission electron microscopy, scanning electron microscopy, and Rutherford backscattering spectroscopy. |
| Rights: | This is the peer reviewed version of the following article: Surface and interface analysis, 48(8), August 2016, pp.899-905, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/sia.5851/full. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/66901 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 坂入 正敏
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