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Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles
Title: | Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles |
Authors: | Arita, Masashi Browse this author →KAKEN DB | Ohno, Yuuki Browse this author | Murakami, Yosuke Browse this author | Takamizawa, Keisuke Browse this author | Tsurumaki-Fukuchi, Atsushi Browse this author | Takahashi, Yasuo Browse this author |
Issue Date: | Aug-2016 |
Publisher: | Royal Society of Chemistry |
Journal Title: | Nanoscale |
Volume: | 8 |
Issue: | 31 |
Start Page: | 14754 |
End Page: | 14766 |
Publisher DOI: | 10.1039/c6nr02602h |
PMID: | 27456192 |
Abstract: | The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process. |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/67028 |
Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 有田 正志
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