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Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

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Title: Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles
Authors: Arita, Masashi Browse this author →KAKEN DB
Ohno, Yuuki Browse this author
Murakami, Yosuke Browse this author
Takamizawa, Keisuke Browse this author
Tsurumaki-Fukuchi, Atsushi Browse this author
Takahashi, Yasuo Browse this author
Issue Date: Aug-2016
Publisher: Royal Society of Chemistry
Journal Title: Nanoscale
Volume: 8
Issue: 31
Start Page: 14754
End Page: 14766
Publisher DOI: 10.1039/c6nr02602h
PMID: 27456192
Abstract: The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process.
Type: article (author version)
URI: http://hdl.handle.net/2115/67028
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 有田 正志

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