HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >

Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate

This item is licensed under: Creative Commons Attribution 4.0 International

Files in This Item:
s41598-017-07104-z.pdf1.78 MBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/67151

Title: Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate
Authors: Takahashi, Nozomi Browse this author
Huminiuc, Teodor Browse this author
Yamamoto, Yuta Browse this author
Yanase, Takashi Browse this author
Shimada, Toshihiro Browse this author
Hirohata, Atsufumi Browse this author
Nagahama, Taro Browse this author →KAKEN DB
Issue Date: 1-Aug-2017
Publisher: Nature Publishing Group
Journal Title: Scientific reports
Volume: 7
Start Page: 7009
Publisher DOI: 10.1038/s41598-017-07104-z
Abstract: The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxial growth of magnetic oxide on Si could be the first step of new functional spintronics devices with semiconductors. However, epitaxial spinel ferrite films are generally grown on oxide substrates, not on semiconductors. To combine oxide spintronics and semiconductor technology, we fabricated Fe3O4 films through epitaxial growth on a Si(111) substrate by inserting a gamma-Al2O3 buffer layer. Both of gamma-Al2O3 and Fe3O4 layer grew epitaxially on Si and the films exhibited the magnetic and electronic properties as same as bulk. Furthermore, we also found the buffer layer dependence of crystal structure of Fe3O4 by X-ray diffraction and high-resolution transmission electron microscope. The Fe3O4 films on an amorphous-Al2O3 buffer layer grown at room temperature grew uniaxially in the (111) orientation and had a textured structure in the plane. When Fe3O4 was deposited on Si(111) directly, the poly-crystal Fe3O4 films were obtained due to SiOx on Si substrate. The epitaxial Fe3O4 layer on Si substrates enable us the integration of highly functional spintoronic devices with Si technology.
Rights: https://creativecommons.org/licenses/by/4.0/
Type: article
URI: http://hdl.handle.net/2115/67151
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 長浜 太郎

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 

 - Hokkaido University