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Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/68223

Title: Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform
Authors: Chiba, Kohei Browse this author
Tomioka, Katsuhiro Browse this author →KAKEN DB
Yoshida, Akinobu Browse this author
Motohisa, Junichi Browse this author →KAKEN DB
Issue Date: Dec-2017
Publisher: American Institute of Physics (AIP)
Journal Title: AIP Advances
Volume: 7
Issue: 12
Start Page: 125304
Publisher DOI: 10.1063/1.4993689
Abstract: Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-composition in the solid phase during the NW growth. The In composition with a nanometer-scaled pitch differed completely from that with a mu m-scaled pitch. Accordingly, the growth morphologies of InGaAs NWs show different behavior with respect to the In/Ga ratio. (c) 2017 Author(s).
Rights: https://creativecommons.org/licenses/by/4.0/
https://creativecommons.org/licenses/by/4.0/
Type: article
URI: http://hdl.handle.net/2115/68223
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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