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Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3
| Title: | Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3 |
| Authors: | Sanchela, Anup V. Browse this author | | Onozato, Takaki Browse this author | | Feng, Bin Browse this author | | Ikuhara, Yuichi Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Issue Date: | 4-Aug-2017 |
| Publisher: | American Physical Society (APS) |
| Journal Title: | Physical Review Materials |
| Volume: | 1 |
| Issue: | 3 |
| Start Page: | 34603 |
| Publisher DOI: | 10.1103/PhysRevMaterials.1.034603 |
| Abstract: | The exact intrinsic carrier effective mass m* of a well-studied transparent oxide semiconductor BaSnO3 is unknown because the reported m* values are scattered from 0.06m(0) to 3.7m(0). This paper identifies the intrinsic m* of BaSnO3, m* = 0.40 +/- 0.01m(0), by the thermopower modulation clarification method and determines the threshold of the degenerate/nondegenerate semiconductor. At the threshold, the thermopower values of both the La-doped BaSnO3 and BaSnO3 thin-film transistor structures are 240 mu V K-1, the bulk carrier concentration is 1.4 x 10(19) cm(-3), and the two-dimensional sheet carrier concentration is 1.8 x 10(12) cm(-2). When the Fermi energy E-F is located above the parabolic shaped conduction band bottom, the mobility is rather high. In contrast, E-F below the threshold exhibits a very low carrier mobility, most likely because the tail states suppress the carrier mobility. The present results are useful to further develop BaSnO3-based oxide electronics. |
| Rights: | © 2017 American Physical Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/68299 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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