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Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3

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Title: Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3
Authors: Sanchela, Anup V. Browse this author
Onozato, Takaki Browse this author
Feng, Bin Browse this author
Ikuhara, Yuichi Browse this author
Ohta, Hiromichi Browse this author →KAKEN DB
Issue Date: 4-Aug-2017
Publisher: American Physical Society (APS)
Journal Title: Physical Review Materials
Volume: 1
Issue: 3
Start Page: 34603
Publisher DOI: 10.1103/PhysRevMaterials.1.034603
Abstract: The exact intrinsic carrier effective mass m* of a well-studied transparent oxide semiconductor BaSnO3 is unknown because the reported m* values are scattered from 0.06m(0) to 3.7m(0). This paper identifies the intrinsic m* of BaSnO3, m* = 0.40 +/- 0.01m(0), by the thermopower modulation clarification method and determines the threshold of the degenerate/nondegenerate semiconductor. At the threshold, the thermopower values of both the La-doped BaSnO3 and BaSnO3 thin-film transistor structures are 240 mu V K-1, the bulk carrier concentration is 1.4 x 10(19) cm(-3), and the two-dimensional sheet carrier concentration is 1.8 x 10(12) cm(-2). When the Fermi energy E-F is located above the parabolic shaped conduction band bottom, the mobility is rather high. In contrast, E-F below the threshold exhibits a very low carrier mobility, most likely because the tail states suppress the carrier mobility. The present results are useful to further develop BaSnO3-based oxide electronics.
Rights: © 2017 American Physical Society
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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