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Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3

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タイトル: Thermopower modulation clarification of the intrinsic effective mass in transparent oxide semiconductor BaSnO3
著者: Sanchela, Anup V. 著作を一覧する
Onozato, Takaki 著作を一覧する
Feng, Bin 著作を一覧する
Ikuhara, Yuichi 著作を一覧する
Ohta, Hiromichi 著作を一覧する
発行日: 2017年 8月 4日
出版者: American Physical Society (APS)
誌名: Physical Review Materials
巻: 1
号: 3
開始ページ: 34603
出版社 DOI: 10.1103/PhysRevMaterials.1.034603
抄録: The exact intrinsic carrier effective mass m* of a well-studied transparent oxide semiconductor BaSnO3 is unknown because the reported m* values are scattered from 0.06m(0) to 3.7m(0). This paper identifies the intrinsic m* of BaSnO3, m* = 0.40 +/- 0.01m(0), by the thermopower modulation clarification method and determines the threshold of the degenerate/nondegenerate semiconductor. At the threshold, the thermopower values of both the La-doped BaSnO3 and BaSnO3 thin-film transistor structures are 240 mu V K-1, the bulk carrier concentration is 1.4 x 10(19) cm(-3), and the two-dimensional sheet carrier concentration is 1.8 x 10(12) cm(-2). When the Fermi energy E-F is located above the parabolic shaped conduction band bottom, the mobility is rather high. In contrast, E-F below the threshold exhibits a very low carrier mobility, most likely because the tail states suppress the carrier mobility. The present results are useful to further develop BaSnO3-based oxide electronics.
Rights: © 2017 American Physical Society
資料タイプ: article
URI: http://hdl.handle.net/2115/68299
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 太田 裕道

 

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