Surface-related operation instabilities of GaN HEMTs and their control using Al2O3-based MOS structures [an abstract of dissertation and a summary of dissertation review]


Hokkaido University \| Library \| HUSCAP	Advanced Search		言語

	Home
	About HUSCAP
	Open Access Policy

	Browse by Author

Browse
	Communities & Collections

	Scholarly Journals
	Theses
	Doctoral Dissertations Listed by Graduate Schools
	Conference Procs.
	Events

	HUSCAP Senior (in Japanese)

	Societies

	Downloads (country)

For university staff
	How to post your papers to HUSCAP
	Publication of theses
	Helpline about theses publication

Open Archives Compliant

You can search our collection also at:
	Google
	Google Scholar
	CiNii
	IRDB
	OAIster
	NDLTD

Files in This Item:

Kenya_Nishiguchi_abstract.pdf	論文内容の要旨	21.04 kB	PDF	View/Open
Kenya_Nishiguchi_review.pdf	審査の要旨	19.15 kB	PDF	View/Open

Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/70526

Related Items in HUSCAP:

Title:	Surface-related operation instabilities of GaN HEMTs and their control using Al2O3-based MOS structures [an abstract of dissertation and a summary of dissertation review]
Other Titles:	GaN HEMTにおける表面起因の動作不安定性とAl2O3 MOS構造による制御 [論文内容及び審査の要旨]
Authors:	西口, 賢弥 Browse this author
Issue Date:	22-Mar-2018
Publisher:	Hokkaido University
Conffering University:	北海道大学
Degree Report Number:	甲第13083号
Degree Level:	博士
Degree Discipline:	工学
Examination Committee Members:	(主査) 教授本久順一, 教授葛西誠也, 特任教授佐野栄一, 教授橋詰保
Degree Affiliation:	情報科学研究科（情報エレクトロニクス専攻）
Rights:	https://creativecommons.org/licenses/by-nc-sa/4.0/
Type:	theses (doctoral - abstract and summary of review)
URI:	http://hdl.handle.net/2115/70526
Appears in Collections:	学位論文 (Theses) > 博士　（工学）課程博士 (Doctorate by way of Advanced Course) > 情報科学院(Graduate School of Information Science and Technology)

OAI-PMH ( junii2 , jpcoar_1.0 )

- Hokkaido University