HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >


Files in This Item:
jacg33.4.195.pdf271.67 kBPDFView/Open
Please use this identifier to cite or link to this item:

Title: 浮遊帯溶融法によるNd添加バナデイト単結晶の育成と吸収帯および発光帯の広域化
Other Titles: Float zone growth and broadening of the absorption and emission bands of Nd-doped vanadate single crystals
Authors: 中原, 崇博1 Browse this author
樋口, 幹雄2 Browse this author →KAKEN DB
高橋, 順一3 Browse this author
小川, 貴代4 Browse this author
和田, 智之5 Browse this author
Authors(alt): Nakahara, Takahiro1
Higuchi, Mikio2
Takahashi, Junichi3
Ogawa, Takayo4
Wada, Satoshi5
Keywords: FD法
Issue Date: 1-Nov-2006
Publisher: 日本結晶成長学会
Journal Title: 日本結晶成長学会誌
Journal Title(alt): Journal of the Japanese Association for Crystal Growth
Volume: 33
Issue: 4
Start Page: 195
Publisher DOI: 10.19009/jjacg.33.3_195
Abstract: Nd:PrVO_4 and Nd:La_xGd_<1-x>VO_4 single crystals were grown by the floating zone method in order to broaden the absorption and emission bands of Nd^<3+>. Nd:La_xGd_<1-x>VO_4 (X≦0.15) and Nd:PrVO_4 single crystals had no macroscopic defects, whereas cellular structures were found in a Nd:La_<0.2>Gd_<0.8>VO_4 crystal. The absorption band of Nd:PrVO_4 around 808nm was broader than that of Nd:GdVO_4, and intensive absorption peaks were not observed around 1.06μm and 1.3μm.
Description: 01pA05
Rights: 著作権は日本結晶成長学会にある。
Type: proceedings
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 樋口 幹雄

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 - Hokkaido University