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浮遊帯溶融法によるNd添加バナデイト単結晶の育成と吸収帯および発光帯の広域化
| Title: | 浮遊帯溶融法によるNd添加バナデイト単結晶の育成と吸収帯および発光帯の広域化 |
| Other Titles: | Float zone growth and broadening of the absorption and emission bands of Nd-doped vanadate single crystals |
| Authors: | 中原, 崇博1 Browse this author | | 樋口, 幹雄2 Browse this author →KAKEN DB | | 高橋, 順一3 Browse this author | | 小川, 貴代4 Browse this author | | 和田, 智之5 Browse this author |
| Authors(alt): | Nakahara, Takahiro1 | | Higuchi, Mikio2 | | Takahashi, Junichi3 | | Ogawa, Takayo4 | | Wada, Satoshi5 |
| Keywords: | FD法 | | 結晶 |
| Issue Date: | 1-Nov-2006 |
| Publisher: | 日本結晶成長学会 |
| Journal Title: | 日本結晶成長学会誌 |
| Journal Title(alt): | Journal of the Japanese Association for Crystal Growth |
| Volume: | 33 |
| Issue: | 4 |
| Start Page: | 195 |
| Publisher DOI: | 10.19009/jjacg.33.3_195 |
| Abstract: | Nd:PrVO_4 and Nd:La_xGd_<1-x>VO_4 single crystals were grown by the floating zone method in order to broaden the absorption and emission bands of Nd^<3+>. Nd:La_xGd_<1-x>VO_4 (X≦0.15) and Nd:PrVO_4 single crystals had no macroscopic defects, whereas cellular structures were found in a Nd:La_<0.2>Gd_<0.8>VO_4 crystal. The absorption band of Nd:PrVO_4 around 808nm was broader than that of Nd:GdVO_4, and intensive absorption peaks were not observed around 1.06μm and 1.3μm. |
| Description: | 01pA05 |
| Rights: | 著作権は日本結晶成長学会にある。 |
| Type: | proceedings |
| URI: | http://hdl.handle.net/2115/73396 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 樋口 幹雄
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