HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >

浮遊帯溶融法によるNd:LuVO4単結晶の育成とそのレーザ特性

Files in This Item:
jacg32.3.254.pdf329.48 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/73397

Title: 浮遊帯溶融法によるNd:LuVO4単結晶の育成とそのレーザ特性
Other Titles: Float zone growth and laser performance of Nd:LuVO4 single crystals
Authors: 樋口, 幹雄1 Browse this author →KAKEN DB
清水, 俊行2 Browse this author
高橋, 順一3 Browse this author
小川, 貴代4 Browse this author
和田, 智之5 Browse this author
Authors(alt): Higuchi, Mikio1
Shimizu, Toshiyuki2
Takahashi, Junichi3
Ogawa, Takayo4
Wada, Satoshi5
Keywords: FZ法
結晶
Issue Date: 17-Aug-2005
Publisher: 日本結晶成長学会
Journal Title: 日本結晶成長学会誌
Journal Title(alt): Journal of the Japanese Association for Crystal Growth
Volume: 32
Issue: 3
Start Page: 254
Publisher DOI: 10.19009/jjacg.32.3_254
Abstract: Nd: LuVO_4 single crystals were successfully grown by the floating zone method. All the grown crystals had no macroscopic defects such as inclusions and low-angle grain boundaries but contained growth striations. The effective distribution coefficient of Nd in LaVO_4 was estimated to be about 0.5. In the laser oscillation experiments, a slope efficiency of 77% was obtained for the Nd 1 at%-doped crystal by pumping with a π-polarized beam at 880nm.
Description: 19aB02
Rights: 著作権は日本結晶成長学会にある。
Type: proceedings
URI: http://hdl.handle.net/2115/73397
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 樋口 幹雄

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 

 - Hokkaido University