HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >

FZ法による酸化物単結晶育成における酸素分圧の影響

Files in This Item:
jacg27.5.288.pdf542.72 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/73401

Title: FZ法による酸化物単結晶育成における酸素分圧の影響
Other Titles: Effect of oxygen partial pressures on the growth of oxide single crystals by the floating zone method
Authors: 樋口, 幹雄1 Browse this author →KAKEN DB
小平, 紘平2 Browse this author
Authors(alt): Higuchi, Mikio1
Kodaira, Kohei2
Keywords: 結晶
ルチル
Issue Date: 15-Dec-2000
Publisher: 日本結晶成長学会
Journal Title: 日本結晶成長学会誌
Journal Title(alt): Journal of the Japanese Association for Crystal Growth
Volume: 27
Issue: 5
Start Page: 288
End Page: 292
Publisher DOI: 10.19009/jjacg.27.5_288
Abstract: This review deals with effects of oxygen partial pressures on the crystal growth of oxides containing transition elements. Rutile (TiO_2) and chromium-doped forsterite (Cr: Mg_2SiO_4) single crystals are successfully grown by the floating zone method. Rutile single crystals are grown under a low oxygen partial pressure of about 10^3 Pa to avoid the formation of low-angle grain boundaries. Zirconium-doping is effective to grow rutile single crystals without low-angle grain boundaries and bubble inclusions at a high growth rate of 10 mm/h under a high oxygen partial pressure of 10^5 Pa. Cr^<4+>-rich Cr: Mg_2SiO_4 single crystals are grown under a high oxygen partial pressure of 1-2 10^5 Pa, which can not be realized in the conventional Czochralski method using an iridium crucible.
Rights: 著作権は日本結晶成長学会にある。
Type: article
URI: http://hdl.handle.net/2115/73401
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 樋口 幹雄

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 

 - Hokkaido University