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Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy
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| Title: | Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy |
| Authors: | Yoshida, Akinobu Browse this author | | Tomioka, Katsuhiro Browse this author →KAKEN DB | | Ishizaka, Fumiya Browse this author | | Motohisa, Junichi Browse this author →KAKEN DB |
| Keywords: | Nanostructures | | Metalorganic vapor phase epitaxy | | Selective epitaxy | | Nanomaterials | | Semiconducting germanium | | Semiconducting III-V materials |
| Issue Date: | 15-Apr-2017 |
| Publisher: | Elsevier |
| Journal Title: | Journal of Crystal Growth |
| Volume: | 464 |
| Start Page: | 75 |
| End Page: | 79 |
| Publisher DOI: | 10.1016/j.jcrysgro.2016.10.083 |
| Abstract: | We report the growth of InGaAs nanowires (NWs) on Ge(111) substrates using selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) for novel InGaAs/Ge hybrid complementary metal-oxide-semiconductor (CMOS) applications. Ge(111) substrates with periodic arrays of mask opening were prepared, and InGaAs was selectively grown on the opening region of Ge(111). A uniform array of InGaAs NWs with a diameter around 100 nm was successfully grown using appropriate preparation of the initial surfaces with an AsH3 thermal treatment and flow-rate modulation epitaxy (FME). We found that optimizing partial pressure of AsH3 and the number of FME cycles improved the yield of vertical InGaAs NWs. Line-scan profile analysis of energy dispersive X-ray (EDX) spectrometry showed that the In composition in the InGaAs NW was almost constant from the bottom to the top. Transmission electron microscope (TEM) analysis revealed that the interface between InGaAs NW and Ge had misfit dislocations, but their distance was longer than that expected from the difference in their lattice constants. |
| Rights: | © 2016, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ | | http://creativecommons.org/licenses/by-nc-nd/4.0/ |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/73581 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 冨岡 克広
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