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Title: 金属イオン溶出抑制を目的とした矯正用ステンレスワイヤーへの化学修飾について
Other Titles: Chemical modification on orthodontic wires for suppression elution of metal ions
Authors: 土屋, 聡1 Browse this author
Authors(alt): Tsuchiya, Satoshi1
Keywords: オクタデシルホスホン酸
SAM(self-assembled monolayer)
octadecylphosphonic acid
self-assembled monolayer (SAM)
Issue Date: Mar-2019
Publisher: 北海道歯学会
Journal Title: 北海道歯学雑誌
Volume: 39
Issue: 2
Start Page: 104
End Page: 110
Abstract: 本研究の目的は,矯正歯科用ステンレススチールワイヤーにオクタデシルホスホン酸を化学修飾(SAM形成)することでワイヤーの表面を改質し,金属アレルギーの原因となる金属イオン溶出の抑制効果を評価することである.  実際に,臨床で用いているステンレススチールワイヤーを試料とし,SAM形成したワイヤー表面のぬれ性の変化,形成された膜厚の測定を調査した.また,各種浸漬液に対する金属イオンの溶出量を,ICP(プラズマ誘導発光分光分析機)を用いて測定した.  接触角試験より,接触角が増加したことから,SUS板表面が不動態被膜ではない別の疎水性被膜によってコートされたことを確認した.また,エリプソメーターで膜厚測定した結果,約1.5±0.2 nmの被膜の形成を認めた.金属イオン溶出試験では,ワイヤーにSAM形成を行うことで,金属アレルギーを惹起する可能性のあるクロムイオン,ニッケルイオン共に溶出量が有意に減少することが明らかとなった. また,ギ酸,塩酸など強い酸に浸漬した場合では金属イオンの顕著な低下が見られた.このことから,SAMが強い有機酸や塩素イオンによる不動態皮膜の破壊を緩和したことが示唆された.  以上より,オクタデシルホスホン酸を化学修飾しワイヤー表面にSAM形成させることにより,金属アレルギーの原因となる金属イオン溶出の抑制効果があることが示唆された.
The purpose of this study is to modify the surface of wire by the chemical modification of orthodontic stainless steel wire (SUS) with octadecylphosphonic acid (Self Assembled Monolayer [SAM] formation) and to evaluate the inhibitory effect against the metal ion elution which is the cause of metal allergy. The stainless steel wire which was actually used clinically was used as a sample and the wettability change of SAMcoated wire surface and the thickness of formed film were evaluated. In addition, the elution amounts of metallic ions in various kinds of soaking liquids were measured by ICP (inductively coupled plasma emission spectral analytical instrument). By SAM formation resction, contact angle of SUS plate was increased. It suggests hydrophobic film for formation on their surface. In addition, in the results of film thickness measurement by an ellipsometer, the formation of film with the thickness of about 1.5±0.2 nm was recognized. It was revealed in the metallic ion elution test that the elution amounts of both Cr ion and Ni ion which have the possibility to cause a metal allergy were reduced by the SAM formation on the wire surface. In addition, the reduction rates of elution amount were large in hydrochloric acid and it suggested that the breakage of a passive state film by a chloric ion of a halogen element was alleviated by SAM. From the above results, it was suggested that the metal ion elution which is the cause of metal allergy was suppressed by the chemical modification with octadecylphosphonic acid on the surface of wire.
Type: article
Appears in Collections:北海道歯学雑誌 = Hokkaido Journal of Dental Science > 第39巻 第2号

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