HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >

Suppression of carbon desorption from 4H-SiC by irradiating a remote nitrogen plasma at a low temperature

Files in This Item:
HUSCUP-Shimabayashi.pdf1.3 MBPDFView/Open
Please use this identifier to cite or link to this item:

Title: Suppression of carbon desorption from 4H-SiC by irradiating a remote nitrogen plasma at a low temperature
Authors: Shimabayashi, Masaharu Browse this author
Kurihara, Kazuaki Browse this author
Sasaki, Koichi Browse this author →KAKEN DB
Issue Date: May-2018
Publisher: IOP Publishing
Journal Title: Japanese Journal of Applied Physics (JJAP)
Volume: 57
Issue: 5
Start Page: 056201
Publisher DOI: 10.7567/JJAP.57.056201
Abstract: We remotely irradiated a nitrogen plasma onto the carbon-side surface of 4H-SiC at a low temperature, and examined the effect of sample cooling on the characteristics of the nitride layer. An improved nitride layer, which had higher concentrations of carbon and silicon and a lower concentration of oxygen, was formed in the region at depths of more than 0.6-0.9nm from the top surface. The depth of the fragile nitride layer in the top region, where no improved characteristics of the nitride layer were observed, became smaller with sample cooling. In addition, on the basis of the experimental results, we discussed the difference in the activation energy of the nitriding reaction of 4H-SiC supported by atomic nitrogen and molecular nitrogen in the metastable A(3)Sigma(+)(U) state.
Rights: © 2018 The Japan Society of Applied Physics
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 嶋林 正晴

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 - Hokkaido University