Interface control of Al2O3-based insulated-gate structures for high-frequency GaN HEMTs


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Please use this identifier to cite or link to this item:https://doi.org/10.14943/doctoral.k13513

Related Items in HUSCAP:

Title:	Interface control of Al2O3-based insulated-gate structures for high-frequency GaN HEMTs
Other Titles:	Al2O3絶縁ゲート構造の界面制御と高周波GaN HEMTへの応用
Authors:	Ozaki, Shiro¹ Browse this author
Authors(alt):	尾崎，史朗¹
Issue Date:	25-Mar-2019
Publisher:	Hokkaido University
Conffering University:	北海道大学
Degree Report Number:	甲第13513号
Degree Level:	博士
Degree Discipline:	工学
Examination Committee Members:	(主査) 教授本久順一, 教授葛西誠也, 准教授佐藤威友
Degree Affiliation:	情報科学研究科(情報エレクトロニクス専攻)
Type:	theses (doctoral)
URI:	http://hdl.handle.net/2115/74175
Appears in Collections:	課程博士 (Doctorate by way of Advanced Course) > 情報科学院(Graduate School of Information Science and Technology) 学位論文 (Theses) > 博士　（工学）

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