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Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/74553

Title: Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3
Authors: Sanchela, Anup V. Browse this author
Wei, Mian Browse this author
Zensyo, Haruki Browse this author
Feng, Bin Browse this author
Lee, Joonhyuk Browse this author
Kim, Gowoon Browse this author
Jeen, Hyoungjeen Browse this author
Ikuhara, Yuichi Browse this author
Ohta, Hiromichi Browse this author →KAKEN DB
Issue Date: 4-Jun-2018
Publisher: American Institute of Physics (AIP)
Journal Title: Applied physics letters
Volume: 112
Issue: 23
Start Page: 232102
Publisher DOI: 10.1063/1.5033326
Abstract: In this study, we report that the carrier mobility of 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness, whereas it is unrelated to the film/substrate lattice mismatch (+5.4% for SrTiO3 and -2.3% for MgO). The films exhibited large differences in lattice parameters, lateral grain sizes (similar to 85 nm for SrTiO3 and similar to 20 nm for MgO), surface morphologies, threading dislocation densities, and misfit dislocation densities. However, the mobility dependences on the film thickness in both cases were almost the same, saturating at similar to 100 cm(2) V-1 s(-1), while the charge carrier densities approached the nominal carrier concentration (=[2% La3+]). Our study clearly indicates that the carrier mobility of LBSO films strongly depends on the thickness. These results would be beneficial for understanding the carrier transport properties and fruitful to further enhance the mobility of LBSO films. Published by AIP Publishing.
Rights: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in Anup V. Sanchela, Mian Wei, Haruki Zensyo, Bin Feng, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta. Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3. Appl. Phys. Lett. 112, 232102 (2018) and may be found at https://doi.org/10.1063/1.5033326 .
Type: article
URI: http://hdl.handle.net/2115/74553
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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