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アルミニウム誘起結晶化法による多結晶シリコン薄膜形成挙動のその場加熱観察
Title: | アルミニウム誘起結晶化法による多結晶シリコン薄膜形成挙動のその場加熱観察 |
Other Titles: | In-Situ Heating Observation for Formation Behavior of Polycrystalline Silicon Thin Films Fabricated Using Aluminum Induced Crystallization |
Authors: | 池田, 賢一1 Browse this author →KAKEN DB | 廣田, 健2 Browse this author | 藤本, 健資3 Browse this author | 杉本, 陽平4 Browse this author | 高田, 尚記5 Browse this author | 井, 誠一郎6 Browse this author | 中島, 英治7 Browse this author | 中島, 寛8 Browse this author |
Authors(alt): | Ikeda, Ken-ichi1 | Hirota, Takeshi2 | Fujimoto, Kensuke3 | Sugimoto, Youhei4 | Takata, Naoki5 | Ii, Seiichiro6 | Nakashima, Hideharu7 | Nakashima, Hiroshi8 |
Keywords: | aluminum induced crystallization | polycrystalline silicon | in-situ heating observation |
Issue Date: | Feb-2007 |
Publisher: | 日本金属学会 |
Journal Title: | 日本金属学会誌 |
Journal Title(alt): | Journal of the Japan Institute of Metals |
Volume: | 71 |
Issue: | 2 |
Start Page: | 158 |
End Page: | 163 |
Publisher DOI: | 10.2320/jinstmet.71.158 |
Abstract: | The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system. |
Type: | article |
URI: | http://hdl.handle.net/2115/75542 |
Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 池田 賢一
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