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アルミニウム誘起結晶化法による多結晶シリコン薄膜形成挙動のその場加熱観察

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J. Jpn Inst. Metal 71(2) 158.pdf976.28 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/75542

Title: アルミニウム誘起結晶化法による多結晶シリコン薄膜形成挙動のその場加熱観察
Other Titles: In-Situ Heating Observation for Formation Behavior of Polycrystalline Silicon Thin Films Fabricated Using Aluminum Induced Crystallization
Authors: 池田, 賢一1 Browse this author →KAKEN DB
廣田, 健2 Browse this author
藤本, 健資3 Browse this author
杉本, 陽平4 Browse this author
高田, 尚記5 Browse this author
井, 誠一郎6 Browse this author
中島, 英治7 Browse this author
中島, 寛8 Browse this author
Authors(alt): Ikeda, Ken-ichi1
Hirota, Takeshi2
Fujimoto, Kensuke3
Sugimoto, Youhei4
Takata, Naoki5
Ii, Seiichiro6
Nakashima, Hideharu7
Nakashima, Hiroshi8
Keywords: aluminum induced crystallization
polycrystalline silicon
in-situ heating observation
Issue Date: Feb-2007
Publisher: 日本金属学会
Journal Title: 日本金属学会誌
Journal Title(alt): Journal of the Japan Institute of Metals
Volume: 71
Issue: 2
Start Page: 158
End Page: 163
Publisher DOI: 10.2320/jinstmet.71.158
Abstract: The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.
Type: article
URI: http://hdl.handle.net/2115/75542
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 池田 賢一

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