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シリコン表面エネルギーの方位依存性の評価
Title: | シリコン表面エネルギーの方位依存性の評価 |
Other Titles: | Evaluation of Crystal Orientation Dependence of Surface Energy in Silicon |
Authors: | 水口, 隆1 Browse this author | 池田, 賢一2 Browse this author →KAKEN DB | 吉田, 冬樹3 Browse this author | 中島, 英治4 Browse this author | 阿部, 弘5 Browse this author |
Authors(alt): | Mizuguchi, Takashi1 | Ikeda, Ken-ichi2 | Yoshida, Fuyuki3 | Nakashima, Hideharu4 | Abe, Hiroshi5 |
Keywords: | silicon | surface energy | molecular dynamics | crystal orientation dependence | reconstraction | cleavage plane |
Issue Date: | Feb-2004 |
Publisher: | 日本金属学会 |
Journal Title: | 日本金属学会誌 |
Journal Title(alt): | Journal of the Japan Institute of Metals |
Volume: | 68 |
Issue: | 2 |
Start Page: | 86 |
End Page: | 89 |
Publisher DOI: | 10.2320/jinstmet.68.86 |
Abstract: | Silicon has been used as semiconductor devices. It is well known that silicon shows a sharp brittle-ductile transition and that silicon is a brittle material at the operative temperature of a device. Hence, it is important to understand fracture behavior to improve the reliability of a device.
Because the surface energy, γs is considered to affect the fracture behavior of a brittle material, it is important to investigate the crystal orientation dependence of γs just after fracture in order to clarify the details of fracture mechanism. This study was carried out to clarify systematically the crystal orientation dependence of γs in silicon by molecular dynamics calculation. And it is also carried out to investigate the crystal orientation dependence of γs after 1098 K annealing and it was compared with γs just after fracture.
It is revealed that γs of (111) plane has the minimum value. This fact agrees with the experimental fact that cleavage plane of Si is {111}. It is also found that γs after 1098 K annealing is lower than that just after fracture. It is concluded that the decrease in γs was brought about by the reconstruction of the atoms. |
Type: | article |
URI: | http://hdl.handle.net/2115/75546 |
Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 池田 賢一
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