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シリコン表面エネルギーの方位依存性の評価

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J. Jpn Inst. Metal 68(2) 86.pdf1.01 MBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/75546

Title: シリコン表面エネルギーの方位依存性の評価
Other Titles: Evaluation of Crystal Orientation Dependence of Surface Energy in Silicon
Authors: 水口, 隆1 Browse this author
池田, 賢一2 Browse this author →KAKEN DB
吉田, 冬樹3 Browse this author
中島, 英治4 Browse this author
阿部, 弘5 Browse this author
Authors(alt): Mizuguchi, Takashi1
Ikeda, Ken-ichi2
Yoshida, Fuyuki3
Nakashima, Hideharu4
Abe, Hiroshi5
Keywords: silicon
surface energy
molecular dynamics
crystal orientation dependence
reconstraction
cleavage plane
Issue Date: Feb-2004
Publisher: 日本金属学会
Journal Title: 日本金属学会誌
Journal Title(alt): Journal of the Japan Institute of Metals
Volume: 68
Issue: 2
Start Page: 86
End Page: 89
Publisher DOI: 10.2320/jinstmet.68.86
Abstract: Silicon has been used as semiconductor devices. It is well known that silicon shows a sharp brittle-ductile transition and that silicon is a brittle material at the operative temperature of a device. Hence, it is important to understand fracture behavior to improve the reliability of a device. Because the surface energy, γs is considered to affect the fracture behavior of a brittle material, it is important to investigate the crystal orientation dependence of γs just after fracture in order to clarify the details of fracture mechanism. This study was carried out to clarify systematically the crystal orientation dependence of γs in silicon by molecular dynamics calculation. And it is also carried out to investigate the crystal orientation dependence of γs after 1098 K annealing and it was compared with γs just after fracture. It is revealed that γs of (111) plane has the minimum value. This fact agrees with the experimental fact that cleavage plane of Si is {111}. It is also found that γs after 1098 K annealing is lower than that just after fracture. It is concluded that the decrease in γs was brought about by the reconstruction of the atoms.
Type: article
URI: http://hdl.handle.net/2115/75546
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 池田 賢一

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