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Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation

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Title: Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation
Authors: Ii, Seiichiro Browse this author
Hirota, Takeshi Browse this author
Fujimoto, Kensuke Browse this author
Sugimoto, Youhei Browse this author
Takata, Naoki Browse this author
Ikeda, Ken-ichi Browse this author →KAKEN DB
Nakashima, Hideharu Browse this author
Nakashima, Hiroshi Browse this author
Keywords: aluminum induced crystallization
polycrystalline silicon thin film
transmission electron microscopy
in-situ heating observation
metastable state
Issue Date: 1-Apr-2008
Publisher: The Japan Institute of Metals
Journal Title: MATERIALS TRANSACTIONS
Volume: 49
Issue: 4
Start Page: 723
End Page: 727
Publisher DOI: 10.2320/matertrans.MRA2007312
Abstract: The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) process was investigated by scanning transmission electron microscopy (STEM) and in-situ heating transmission electron microscopy (TEM) observations. The STEM observation and electron dispersive X-ray spectroscopy (EDS) analysis of ex-situ heat-treated specimen revealed that the a-Si layer and Al layer switched the positions with each other during the heat treatment, resulting the crystallization of the a-Si layer. Furthermore, the in-situ heating TEM observation and EDS analysis of as-deposited specimen revealed the mixed state of Si and Al in an a-Si/Al film and the lateral growth of crystalline Si grain during the heating. The mechanism of AIC and switching layers were also discussed from the experimental results and the binary phase diagram of Al-Si system.
Type: article
URI: http://hdl.handle.net/2115/75557
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 池田 賢一

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