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Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode

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Title: Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode
Authors: Goto, Y. Browse this author
Yanase, T. Browse this author
Shimada, T. Browse this author
Shirai, M. Browse this author
Nagahama, T. Browse this author
Issue Date: Aug-2019
Publisher: American Institute of Physics (AIP)
Journal Title: AIP Advances
Volume: 9
Issue: 8
Start Page: 085322
Publisher DOI: 10.1063/1.5113544
Abstract: In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR). The material of which the electrodes are composed is of great importance, because TMR is very sensitive to the electronic states of the electrodes. Additionally, structural defects at the interface also have a significant influence on TMR. In this study, we employ B2-Fe3Sn as the magnetic electrode of MTJs. The use of Fe3Sn could solve the problem of lattice mismatch between Fe and MgO. However, the presence of dissimilar atoms in the electrodes or interface oxidation could be a source of defects at the interface. We find that MTJs with Fe3Sn exhibit a TMR of 50% and an asymmetric bias dependence. (C) 2019 Author(s).
Type: article
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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