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Smooth epitaxial copper film on sapphire surface suitable for high quality graphene growth

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Title: Smooth epitaxial copper film on sapphire surface suitable for high quality graphene growth
Authors: Ma, Tao Browse this author
Ariga, Hiroko Browse this author →KAKEN DB
Takakusagi, Satoru Browse this author →KAKEN DB
Asakura, Kiyotaka Browse this author →KAKEN DB
Keywords: Epitaxial growth
Cu(111) films
Crystal orientation
Roughness
Chemical vapor deposition
Defects
Issue Date: 31-Jan-2018
Publisher: Elsevier
Journal Title: Thin solid films
Volume: 646
Start Page: 12
End Page: 16
Publisher DOI: 10.1016/j.tsf.2017.11.009
Abstract: Graphene, a two-dimensional material, can be grown on a metal substrate using chemical vapor deposition - this growth process is notably influenced by the crystal orientation and the roughness of the substrate surface. We prepared epitaxial Cu(111) films on sapphire substrates using thermal evaporation at various substrate temperatures and studied their crystal orientation and roughness. The well crystallized Cu(111) film with a smooth surface was obtained when the substrate was maintained at 473 K during the deposition. High quality graphene with few intrinsic defects was grown on this Cu film.
Rights: © 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
http://creativecommons.org/licenses/by-nc-nd/4.0/
Type: article (author version)
URI: http://hdl.handle.net/2115/76637
Appears in Collections:触媒科学研究所 (Institute for Catalysis) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 朝倉 清高

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