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Synthesis of Mo1-xNbxS2 thin films by separate-flow chemical vapor deposition with chloride sources

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Title: Synthesis of Mo1-xNbxS2 thin films by separate-flow chemical vapor deposition with chloride sources
Authors: Yanase, Takashi Browse this author
Watanabe, Sho Browse this author
Uehara, Fumiya Browse this author
Weng, Mengting Browse this author
Nagahama, Taro Browse this author
Shimada, Toshihiro Browse this author
Keywords: Chemical vapor deposition
Molybdenum niobium sulfide
Issue Date: 1-Mar-2018
Publisher: Elsevier
Journal Title: Thin solid films
Volume: 649
Start Page: 171
End Page: 176
Publisher DOI: 10.1016/j.tsf.2018.01.052
Abstract: The doping of element (Nb, Ta, etc.) into MoS2, one of the layered transition metal dichalcogenides, is a key technology for electronic devices because the lack of the p-type MoS2 has limited the range of applications. We report that the Mo1-xNbxS2 thin films were synthesized on SiO2/Si substrates by chemical vapor deposition (CVD). It was critical to use chloride sources ( MoCl5 and NbCl5) for the synthesis of Mo1-xNbxS2. The Nb concentration can be increased to 10% by controlling the supplied amount of Nb using a separate-flow CVD apparatus. The Raman spectra changed as the Nb concentration increased, appearing E-2(Nb-S) vibrational mode. The photoluminescence (PL) at 655 nm, attributed to emission from excitons, disappeared, when Nb was incorporated into the MoS2. PL due to trions at 680 nm was observed for the Mo1-xNbxS2 thin films.
Rights: © 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 柳瀬 隆

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