|
Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >
ファセット化したΣ3CSL粒界原子構造のHRTEM観察と第一原理電子状態計算に基づく解析
| Title: | ファセット化したΣ3CSL粒界原子構造のHRTEM観察と第一原理電子状態計算に基づく解析 |
| Other Titles: | Atomic Structure of Faceted Σ3 CSL Grain Boundary in Silicon: HRTEM and Ab-Initio Calculation |
| Authors: | 坂口, 紀史1 Browse this author →KAKEN DB | | 渡辺, 精一2 Browse this author →KAKEN DB | | 市野瀬, 英喜3 Browse this author |
| Authors(alt): | Sakaguchi, Norihito1 | | Watanabe, Seiichi2 | | Ichinose, Hideki3 |
| Keywords: | coincidence site lattice (CSL) grain boundary | | atomic structure | | electronic structure | | high-resolution electron microscopy | | ab-initio calculation |
| Issue Date: | Nov-2008 |
| Publisher: | 日本金属学会 |
| Journal Title: | 日本金属学会誌 |
| Journal Title(alt): | Journal of the Japan Institute of Metals |
| Volume: | 72 |
| Issue: | 11 |
| Start Page: | 886 |
| End Page: | 891 |
| Publisher DOI: | 10.2320/jinstmet.72.886 |
| Abstract: | {112} Σ3 CSL grain boundary in silicon was investigated by high-resolution transmission electron microscopy (HRTEM) and ab-initio calculation. A {112} Σ3 CSL boundary consisted of two segments which differed in atomic structure. The segment near the corner and connected to {111} Σ3 CSL boundary showed symmetric structure and the other long segment, which was the distant and away from the corner, showed asymmetric structure. It was shown that the asymmetric structure is more stable than the symmetric one. In the symmetric segment a 5-fold coordinated atom presented, which elevated the structure energy of the boundary and produced a new state in the band gap. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/76945 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 坂口 紀史
|
