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Magnetic properties and spin-orbit-torque-induced magnetization switching in Ta/MnGa grown on Cr and NiAl buffer layers

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Title: Magnetic properties and spin-orbit-torque-induced magnetization switching in Ta/MnGa grown on Cr and NiAl buffer layers
Authors: Yamanouchi, Michihiko Browse this author →KAKEN DB
Nguyen Viet Bao Browse this author
Shimohashi, Fumiaki Browse this author
Jono, Kohey Browse this author
Inoue, Masaki Browse this author
Uemura, Tetsuya Browse this author
Issue Date: 1-Dec-2019
Publisher: American Institute of Physics (AIP)
Journal Title: AIP Advances
Volume: 9
Issue: 12
Start Page: 125245
Publisher DOI: 10.1063/1.5129300
Abstract: We investigate the magnetic properties and spin-orbit-torque-induced (SOT-induced) magnetization switching in Ta/MnGa/Cr and Ta/MnGa/NiAl structures. Out-of-plane hysteresis loops for the Ta/MnGa/Cr (NiAl) structures are skewed (square). In-plane currents I are applied to Hall devices made of structures exposed to in-plane magnetic fields H-in along the channel direction. Clear asymmetric magnetization switching with respect to the polarity of I and H-in is detected for the Ta/MnGa/NiAl device. Similar asymmetric magnetization switching is observed for the Ta/MnGa/Cr device, although the magnetization is partially switched regardless of the polarity of I and Hin. These results suggest that an in-plane magnetization component opposite to Hin is present in the Cr-buffer structure and that the formation of such a component is suppressed in the NiAl-buffer structure. (C) 2019 Author(s).
Rights: Copyright 2019 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.
https://creativecommons.org/licenses/by/4.0/
Type: article
URI: http://hdl.handle.net/2115/78610
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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