HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >

Controlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx

Files in This Item:
Fukuchi_PSS(RRL)_repository.pdf2.14 MBPDFView/Open
Supporting Information.pdf156.42 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/78801

Title: Controlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx
Authors: Tsurumaki-Fukuchi, Atsushi Browse this author
Tsuta, Yusuke Browse this author
Arita, Masashi Browse this author →KAKEN DB
Takahashi, Yasuo Browse this author →KAKEN DB
Keywords: interface engineering
resistive switching
Schottky junctions
SrTiO3
tantalum oxides
Issue Date: Jul-2019
Publisher: Wiley-Blackwell
Journal Title: Physica status solidi. Rapid research letters
Volume: 13
Issue: 7
Start Page: 1900136
Publisher DOI: 10.1002/pssr.201900136
Abstract: Systematic control of electronic transport is demonstrated for Pt/Nb-doped SrTiO3 (Nb:STO) junctions based on interface engineering with uniform thin layers of TaOx. By inserting TaOx layers fabricated via sputter deposition with different O-2-Ar ratios (r(O2)), the current-voltage characteristics and behavior of resistive switching can be well controlled in Pt/Nb:STO junctions. Reduction of the Schottky barrier is also demonstrated via the insertion, and formation of an ideal ohmic contact with a low contact resistance of r(O2) = 0%. Structural and chemical characterizations show that the resistivity of the TaOx layers depends significantly on r(O2) while maintaining a uniform structure independent of the resistivity. This indicates that the insertion of both insulating and metallic interface layers is possible by sputtering TaOx with no need for epitaxial growth, suggesting TaOx's potential as an interface-layer material. Even with very thin layers (1.0 nm) of TaOx the interfacial properties can be controlled to enhance both ohmic contact formation and resistive switching. These results demonstrate an easy and reliable way to control the characteristics of Pt/Nb:STO junctions and present new insights for their memory and semiconductor device applications.
Rights: This is the peer reviewed version of the following article: Controlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx, which has been published in final form at http://doi.org/10.1002/pssr.201900136. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Type: article (author version)
URI: http://hdl.handle.net/2115/78801
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 福地 厚

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 

 - Hokkaido University