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Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes

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Title: Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes
Authors: Tomioka, Katsuhiro Browse this author →KAKEN DB
Motohisa, Junichi Browse this author →KAKEN DB
Fukui, Takashi Browse this author →KAKEN DB
Issue Date: 1-Jul-2020
Publisher: Nature Publishing Group
Journal Title: Scientific reports
Volume: 10
Issue: 1
Start Page: 10720
Publisher DOI: 10.1038/s41598-020-67625-y
Abstract: Excitonic properties in quantum dot (QD) structure are essential properties for applications in quantum computing, cryptography, and photonics. Top-down fabrication and bottom-up growth by self-assembling for forming the QDs have shown their usefulness. These methods, however, still inherent issues in precision integrating the regimes with high reproducibility and positioning to realize the applications with on-demand quantum properties on Si platforms. Here, we report on a rational synthesis of embedding atomically thin InAs in nanowire materials on Si by selective-area regrowth. An extremely slow growth rate specified for the synthesis demonstrated to form smallest quantum structures reaching nuclear size, and provided good controllability for the excitonic states on Si platforms. The system exhibited sharp photoluminescence spectra originating from exciton and bi-exciton suggesting the carriers were confined inside the nuclei. The selective-area regrowth would open new approach to integrate the exciton states with Si platforms as building-blocks for versatile quantum systems.
Rights: http://creativecommons.org/licenses/by/4.0/
Type: article
URI: http://hdl.handle.net/2115/79106
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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