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An electronic structure governed by the displacement of the indium site in In-S-6 octahedra: LnOInS(2) (Ln = La, Ce, and Pr)

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/79124

Title: An electronic structure governed by the displacement of the indium site in In-S-6 octahedra: LnOInS(2) (Ln = La, Ce, and Pr)
Authors: Ito, Hiroaki Browse this author
Miura, Akira Browse this author →KAKEN DB
Goto, Yosuke Browse this author
Mizuguchi, Yoshikazu Browse this author
Moriyoshi, Chikako Browse this author
Kuroiwa, Yoshihiro Browse this author
Azuma, Masaki Browse this author
Liu, Jinjia Browse this author
Wen, Xiao-Dong Browse this author
Nishioka, Shunta Browse this author
Maeda, Kazuhiko Browse this author
Masubuchi, Yuji Browse this author
Rosero-Navarro, Nataly Carolina Browse this author
Tadanaga, Kiyoharu Browse this author
Issue Date: 28-Aug-2019
Publisher: Royal Society of Chemistry
Journal Title: Dalton transactions
Volume: 48
Issue: 32
Start Page: 12272
End Page: 12278
Publisher DOI: 10.1039/c9dt01562k
Abstract: An extremely large displacement of the indium site in In-S-6 octahedra in LnOInS(2) (Ln = La, Ce, and Pr) was found in synchrotron X-ray diffraction. LaOInS2 with off-center indium in In-S-6 octahedra exhibited a wider optical band gap than CeOInS2 and PrOInS2 with on-center indium. Therefore, the electronic structure of LnOInS(2) is governed by the indium site with an extremely large displacement. All LnOInS(2) produced H-2 gas under visible light irradiation in the presence of sacrificial electron donors.
Type: article (author version)
URI: http://hdl.handle.net/2115/79124
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 三浦 章

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