Title: | An electronic structure governed by the displacement of the indium site in In-S-6 octahedra: LnOInS(2) (Ln = La, Ce, and Pr) |
Authors: | Ito, Hiroaki Browse this author |
Miura, Akira Browse this author →KAKEN DB |
Goto, Yosuke Browse this author |
Mizuguchi, Yoshikazu Browse this author |
Moriyoshi, Chikako Browse this author |
Kuroiwa, Yoshihiro Browse this author |
Azuma, Masaki Browse this author |
Liu, Jinjia Browse this author |
Wen, Xiao-Dong Browse this author |
Nishioka, Shunta Browse this author |
Maeda, Kazuhiko Browse this author |
Masubuchi, Yuji Browse this author |
Rosero-Navarro, Nataly Carolina Browse this author |
Tadanaga, Kiyoharu Browse this author |
Issue Date: | 28-Aug-2019 |
Publisher: | Royal Society of Chemistry |
Journal Title: | Dalton transactions |
Volume: | 48 |
Issue: | 32 |
Start Page: | 12272 |
End Page: | 12278 |
Publisher DOI: | 10.1039/c9dt01562k |
Abstract: | An extremely large displacement of the indium site in In-S-6 octahedra in LnOInS(2) (Ln = La, Ce, and Pr) was found in synchrotron X-ray diffraction. LaOInS2 with off-center indium in In-S-6 octahedra exhibited a wider optical band gap than CeOInS2 and PrOInS2 with on-center indium. Therefore, the electronic structure of LnOInS(2) is governed by the indium site with an extremely large displacement. All LnOInS(2) produced H-2 gas under visible light irradiation in the presence of sacrificial electron donors. |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/79124 |
Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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