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Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs
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| Title: | Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs |
| Authors: | Akamatsu, Tomoya Browse this author | | Tomioka, Katsuhiro Browse this author →KAKEN DB | | Motohisa, Junichi Browse this author →KAKEN DB |
| Keywords: | nanowire | | light-emitting diode | | selective-area growth | | metal-organic vapor-phase epitaxy | | indium phosphide |
| Issue Date: | 25-Sep-2020 |
| Publisher: | IOP Publishing |
| Journal Title: | Nanotechnology |
| Volume: | 31 |
| Issue: | 39 |
| Start Page: | 394003 |
| Publisher DOI: | 10.1088/1361-6528/ab9bd2 |
| Abstract: | Semiconductor nanowires (NWs), which have nanoscale footprints, enable us to realize various quantum structures with excellent position and size controllability, utilizing a wide range of materials for heterostructures. In addition, enhancing light extraction and controlling spontaneous emission by modifying their size and shape are possible. Thus, NWs are promising materials for nanoscale light sources applicable from visible to telecommunication bands. In this study, we grew InP/InAsP/InP axial heterostructure NWs, where the InAsP layer was embedded to serve as an active layer, by selective-area growth and demonstrated vertical NW array light-emitting diodes (LEDs) as a step towards realizing on-demand single photon sources. The NW array LEDs showed rectifying characteristics and electroluminescence originating from the embedded InAsP layer in the near-infrared region. |
| Rights: | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/79173 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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