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Stochastic electron energy gain under sheath electric field near sidewall of chamber to drive inductively coupled magnetized plasmas

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Title: Stochastic electron energy gain under sheath electric field near sidewall of chamber to drive inductively coupled magnetized plasmas
Authors: Takahashi, Hironori Browse this author
Sugawara, Hirotake Browse this author →KAKEN DB
Issue Date: 1-Mar-2020
Publisher: IOP Publishing
Journal Title: Japanese Journal of Applied Physics (JJAP)
Volume: 59
Issue: 3
Start Page: 036001
Publisher DOI: 10.35848/1347-4065/ab71d2
Abstract: Single-electron motions near the sidewall of a chamber to drive a type of inductively coupled magnetized plasmas are analyzed using a Monte Carlo method in a simulation model with sheath electric field (E-sh) to understand the mechanism of electron energy gain (EEG). The analysis reveals that the E x B drift caused by E-sh, along the rf electric field induced in parallel to the sidewall, makes the EEG high and asymmetric between the first and second halves of an rf period. We observe spatial distributions of the EEG as a function of the distance from the wall under several sheath conditions. The EEG is higher under higher Esh and high EEG values are more concentrated in the sheath whose potential gradient is larger. Finally, observation of the phase-resolved EEG distributions demonstrates statistically that the EEG mechanism found in stochastic individual electron behaviors also works for a majority of electrons. (C) 2020 The Japan Society of Applied Physics.
Rights: © 2020 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/80455
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 菅原 広剛

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