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Brass-texture induced grain structure evolution in room temperature rolled ODS copper
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Title: | Brass-texture induced grain structure evolution in room temperature rolled ODS copper |
Authors: | Aghamiri, S. M. S. Browse this author | Oono, N. Browse this author | Ukai, S. Browse this author | Kasada, R. Browse this author | Noto, H. Browse this author | Hishinuma, Y. Browse this author | Muroga, T. Browse this author |
Keywords: | ODS copper | Grain structure | Brass texture | Tensile properties | Rolling and recrystallization |
Issue Date: | 11-Mar-2019 |
Publisher: | Elsevier |
Journal Title: | Materials science and engineering A |
Volume: | 749 |
Start Page: | 118 |
End Page: | 128 |
Publisher DOI: | 10.1016/j.msea.2019.02.019 |
Abstract: | Currently, advanced ODS copper alloy is under study as a potential fusion material providing good mechanical properties. In this work, in order to develop a high performance ODS copper containing 0.5 wt% Y2O3 oxide particles, the effect of room temperature rolling and subsequent annealing on the grain structure evolution, texture development and tensile properties are studied using EBSD, TEM and tensile tests. Microstructure evolution studies show the grain structure coarsens by enhancing the Brass texture during increase of rolling reduction and a unique single crystal-like brass-texture deformed structure is achieved after 80% rolling reduction. We found the deformation mechanism of partial slip by a/2 211 dislocations facilitated by the pinning of a/2 101 perfect dislocations through fine oxide particles is responsible for formation of Brass texture during room temperature rolling. Furthermore, the recrystallization of ODS copper retards to high temperature of similar to 700 degrees C and shows a fine-grained microstructure with different orientations of Goss, Brass, S and Copper. Evaluation of microstructure-mechanical properties of the recrystallized samples expresses that the bimodal grain size distribution at 800 degrees C for 30 min offers a good tensile strength-ductility (UTS: 491 MPa, el(t): 19%) at ambient temperature. |
Rights: | © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | http://creativecommons.org/licenses/by-nc-nd/4.0/ |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/80572 |
Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: S. Mohammad S. Aghamiri
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