Filamentary switching of ReRAM investigated by in-situ TEM

Arita, Masashi; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

doi:10.35848/1347-4065/ab709d


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Filamentary switching of ReRAM investigated by in-situ TEM

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/80771

Title:	Filamentary switching of ReRAM investigated by in-situ TEM
Authors:	Arita, Masashi Browse this author →KAKEN DB
	Tsurumaki-Fukuchi, Atsushi Browse this author
	Takahashi, Yasuo Browse this author →KAKEN DB
Issue Date:	1-Apr-2020
Publisher:	IOP Publishing
Journal Title:	Japanese Journal of Applied Physics (JJAP)
Volume:	59
Start Page:	SG0803
Publisher DOI:	10.35848/1347-4065/ab709d
Abstract:	The filament operation of resistive random-access memory was studied via in-situ transmission electron microscopy, and the contribution of the conductive filament to the resistance switching was experimentally confirmed. In addition to the operation principles the device degradation mechanism was studied through repeated write/erase operations. The importance of controlling Cu movement in the switching layer was confirmed for stable CBRAM (conductive bridge random access memory) operations. A device structure with double switching layers and device miniaturization was effective in restricting over accumulation of Cu in the switching layer and localizing the filament. This may improve the robustness of the device against performance degradation. (C) 2020 The Japan Society of Applied Physics
Rights:	©2020 The Japan Society of Applied Physics
Type:	article (author version)
URI:	http://hdl.handle.net/2115/80771
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 有田正志

OAI-PMH ( junii2 , jpcoar_1.0 )

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